AOU2N60_001

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AOU2N60_001 Application Field and Working Principle

The AOU2N60_001 can be categorized under the transistors - FETs, MOSFETs - Single. The AOU2N60_001 is the latest product of Fairchild Semiconductor company. It is an advanced power MOSFET (metal-oxide-semiconductor field-effect transistor) which has a rated drain-source voltage of 600V (VDS) with a low gate charge and high current handling capability.

The AOU2N60_001 is suitable for various applications such as power management, motor control, DC/DC converters, and low-frequency switching regulators. Its low on-resistance and low gate charge enhance the power efficiency and reduce the heat generated by the device. The AOU2N60_001 is designed to operate in temperatures ranging from -55 to 150 °C.

Working Principle of AOU2N60_001

The AOU2N60_001 is a high-performance power MOSFET with a maximum drain-source on-state resistance (RDS(on)) of 0.35 ohms. It is based on a vertical double-diffused metal-oxide-semiconductor (VMOS) structure and is equipped with a floating body diode connected between the drain and the source. The floating body diode provides voltage protection for the device. The device operates in two distinct modes, “on” and “off” state.

In the “on” state, the AOU2N60_001 will allow large current paths to flow from the drain to the source. This occurs as a result of the gate voltage, which controls the current carrying capacity of the device. The AOU2N60_001 has a threshold voltage of 3.4V and an operational gate voltage range of -4.5V to 12V. When the gate voltage is applied, the electrons in the MOSFET are pulled towards the gate and create a “conductive path” which enables the current to flow across the device.

In the “off” state, no current will flow from the drain to the source. This is because, when the gate voltage is reduced, the electrons are pulled back to their original positions, thus blocking the current path. The AOU2N60_001 can handle a continuous drain current of up to 150mA and can support peak currents of up to 800mA. It is important to note that the power dissipation and the operating temperature of the device should not exceed the rated values.

Advantages of using AOU2N60_001

The AOU2N60_001 is capable of switching up to 600V of power at up to 150mA of continuous current and 800mA of peak current. Its low on-resistance and low gate charge help to increase the power efficiency and reduce the heat generated by the device. It has a low threshold voltage, a wide operating temperature range, and a high breakdown voltage, making it suitable for high power applications. Additionally, its high-speed switching capability makes it suitable for smart power management systems and DC/DC converters. It also has a flat switching time which helps reduce the effect of the switching loss.

The AOU2N60_001 is an advanced MOSFET and can be used for various high power applications. Its low on-resistance, low gate charge, high breakdown voltage, and wide operating temperature range make it a powerful device for efficient power management. With its high speed switching capability and low switching time, the AOU2N60_001 is suitable for smart power management systems and DC/DC converters.

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