| Allicdata Part #: | AOU2N60A-ND |
| Manufacturer Part#: |
AOU2N60A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH |
| More Detail: | N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-25... |
| DataSheet: | AOU2N60A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 57W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.7 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The AOU2N60A is a power MOSFET made by Alpha & Omega Semiconductor. This type of power MOSFETs is optimally suited to applications requiring low gate charge and high current conduction. It is mainly used in consumer and industrial electronics, especially in applications requiring high power levels in a small space.
The AOU2N60A has a wide range of applications including switching power supplies, high power amplifiers, motor control and electronic lighting. It is particularly well suited for use in switch-mode power supplies because of its wide voltage ratings, low on-resistance and fast switching capabilities.
The AOU2N60A is an n-channel power MOSFET. It is a type of insulated gate bipolar transistor (IGBT) which has a metal-oxide semiconductor (MOS) as its gate. The gate is insulated from the source and drain which are both connected to the transistor channel.
The power MOSFET works by using an applied voltage to the gate. The applied voltage creates an electric field between the gate and the channel. When the gate voltage is positive, the electric field induces a physical barrier between the source and the drain. This barrier, or depletion zone, prevents current flow through the channel. When the gate voltage is negative, the electric field is reversed and allows current to flow freely through the channel. The thickness and strength of the depletion zone reduces as the applied voltage increases.
The AOU2N60A has a breakdown voltage of 600 volts and a maximum drain-source voltage of 500 volts. The on-resistance is typically 4 ohms and the maximum continuous drain current is 28 amps. The MOSFET also has a low gate charge which makes it especially suited for switching applications.
The AOU2N60A is a robust power MOSFET which is ideal for applications requiring high power in a small form factor. Its low gate charge and high current conduction capabilities, make it an excellent choice for use in switch-mode power supplies and high power amplification applications. It is rapidly becoming a popular choice for engineers who are looking for an efficient and reliable power solution.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| AOU2N60_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A TO251... |
| AOU2N60 | Alpha & ... | -- | 1000 | MOSFET N-CH 600V 2A TO251... |
| AOU2N60A | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CHN-Channel 600V... |
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AOU2N60A Datasheet/PDF