| Allicdata Part #: | AOU3N60_001-ND |
| Manufacturer Part#: |
AOU3N60_001 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 2.5A IPAK |
| More Detail: | N-Channel 600V 2.5A (Tc) 56.8W (Tc) Through Hole T... |
| DataSheet: | AOU3N60_001 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 1.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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AOU3N60_001 is a high-current depletion mode MOSFET, which is mainly used in applications that require wide voltage operating ranges, such as automotive and industrial, or applications that require high breakdown voltage. This transistor has a wide variety of uses and applications, from power management to audio amplification. The following will explore the application field, working principle and other relevant information of the AOU3N60_001.
Application Field: AOU3N60_001 can be used in various industries, such as automotive and industrial. It is a versatile transistor, which is suitable for high voltage and current operations. Its wide voltage operating range can reach up to 30 V, making it beneficial for high breakdown applications. Due to its high current capabilities and wide input range, this transistor can also be used in a variety of power management applications. Moreover, it is also suitable for motor control, as well as audio burn-in, amplifier, and audio amplifying applications.
Working Principle: The AOU3N60_001 is a depletion mode MOSFET, which works by channeling current through a conductive channel between the source and the drain. This type of transistor does not require any gate or base voltage to be present in order for it to function. Instead, it has a reverse bias diode, which turns current on when the channel is closed by a potential difference between the channel and the gate. When the channel is closed, the voltage being applied between the source and the drain causes a current to flow through the channel, which can be controlled by varying the voltage between the channel and the gate. By controlling the voltage, the current passing through the channel can be regulated.
The AOU3N60_001 also utilizes a secondary gate structure that provides a low drain-to-source resistance and high drain-to-source breakdown voltage. This design makes it ideal for high-power applications, as it can handle large voltages without sacrificing the drain-to-source current. Additionally, this transistor has a higher current than other transistors due its robust secondary gate structure.
Other Information: The AOU3N60_001 has a high-current, low-form factor, making it suitable for use in high-power applications. Furthermore, this transistor is RoHS compliant, offering environmental protection. Additionally, the AOU3N60_001 has a fast switching time of 1.8 microseconds and low on-resistance of 1.4mΩ @ 25°C. It is also capable of handling up to 1.2A of continuous current and up to 2A of pulsed current.
The AOU3N60_001is a highly reliable transistor, which provides great performance in a variety of applications. It is capable of handling high voltage and current operations, and is RoHS compliant. It is suitable for use in applications such as motor control and audio amplification. This transistor also has a fast switching time, a low on-resistance, and a robust secondary gate structure, making it ideal for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| AOU3N60_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 600V 2.5A IPA... |
| AOU3N50 | Alpha & ... | -- | 1522 | MOSFET N-CH 500V 2.8A IPA... |
| AOU3N60 | Alpha & ... | -- | 1000 | MOSFET N-CH 600V 2.5A IPA... |
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AOU3N60_001 Datasheet/PDF