AOU3N60_001 Allicdata Electronics
Allicdata Part #:

AOU3N60_001-ND

Manufacturer Part#:

AOU3N60_001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 2.5A IPAK
More Detail: N-Channel 600V 2.5A (Tc) 56.8W (Tc) Through Hole T...
DataSheet: AOU3N60_001 datasheetAOU3N60_001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 56.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOU3N60_001 is a high-current depletion mode MOSFET, which is mainly used in applications that require wide voltage operating ranges, such as automotive and industrial, or applications that require high breakdown voltage. This transistor has a wide variety of uses and applications, from power management to audio amplification. The following will explore the application field, working principle and other relevant information of the AOU3N60_001.

Application Field: AOU3N60_001 can be used in various industries, such as automotive and industrial. It is a versatile transistor, which is suitable for high voltage and current operations. Its wide voltage operating range can reach up to 30 V, making it beneficial for high breakdown applications. Due to its high current capabilities and wide input range, this transistor can also be used in a variety of power management applications. Moreover, it is also suitable for motor control, as well as audio burn-in, amplifier, and audio amplifying applications.

Working Principle: The AOU3N60_001 is a depletion mode MOSFET, which works by channeling current through a conductive channel between the source and the drain. This type of transistor does not require any gate or base voltage to be present in order for it to function. Instead, it has a reverse bias diode, which turns current on when the channel is closed by a potential difference between the channel and the gate. When the channel is closed, the voltage being applied between the source and the drain causes a current to flow through the channel, which can be controlled by varying the voltage between the channel and the gate. By controlling the voltage, the current passing through the channel can be regulated.

The AOU3N60_001 also utilizes a secondary gate structure that provides a low drain-to-source resistance and high drain-to-source breakdown voltage. This design makes it ideal for high-power applications, as it can handle large voltages without sacrificing the drain-to-source current. Additionally, this transistor has a higher current than other transistors due its robust secondary gate structure.

Other Information: The AOU3N60_001 has a high-current, low-form factor, making it suitable for use in high-power applications. Furthermore, this transistor is RoHS compliant, offering environmental protection. Additionally, the AOU3N60_001 has a fast switching time of 1.8 microseconds and low on-resistance of 1.4mΩ @ 25°C. It is also capable of handling up to 1.2A of continuous current and up to 2A of pulsed current.

The AOU3N60_001is a highly reliable transistor, which provides great performance in a variety of applications. It is capable of handling high voltage and current operations, and is RoHS compliant. It is suitable for use in applications such as motor control and audio amplification. This transistor also has a fast switching time, a low on-resistance, and a robust secondary gate structure, making it ideal for a variety of high-power applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "AOU3" Included word is 3
Part Number Manufacturer Price Quantity Description
AOU3N60_001 Alpha & ... 0.0 $ 1000 MOSFET N-CH 600V 2.5A IPA...
AOU3N50 Alpha & ... -- 1522 MOSFET N-CH 500V 2.8A IPA...
AOU3N60 Alpha & ... -- 1000 MOSFET N-CH 600V 2.5A IPA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics