AOU3N60 Allicdata Electronics
Allicdata Part #:

785-1182-5-ND

Manufacturer Part#:

AOU3N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 2.5A IPAK
More Detail: N-Channel 600V 2.5A (Tc) 56.8W (Tc) Through Hole T...
DataSheet: AOU3N60 datasheetAOU3N60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 56.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOU3N60 is a high voltage three-terminal silicon field effect transistor. It can be used as a simple switch to control loads up to 30A, as well as a booster function to speed up the reversing direction of the transistor. AOU3N60 has many applications, including automotive ignition, audio amplifier, switch mode power supply, DC servo motor and so on. In this paper, we will discuss the application field and working principle of AOU3N60.

Application Field of AOU3N60

AOU3N60 can be used as a simple switch to control loads up to 30A. AOU3N60 is an N-Channel Enhancement Mode Field Effect Transistor and it has an On-Resistande(RDS-on) range of less than 4 ohm. This makes it suitable for controlling high current loads. It is also used in applications where high speed switching is required, such as automotive ignition, audio amplifier, switch mode power supply and DC servo motor.

AOU3N60 can also act as a booster and speed up the reversing direction of the transistor.It can readily be used in any circuit requiring an enhancement mode FET with high efficiency,fast switching speed and high input-output isolation.

Working Principle of AOU3N60

AOU3N60 is an N-Channel Enhancement Mode Field Effect Transistor, which means that it works based on the field effect principle. The working principle of the AOU3N60 is based on the application of a voltage to gate, which forms an electric field with the semiconductor substrate. This electric field changes the conductivity of the substrate, thereby controlling the current flow between the drain and the source.

When the gate voltage (Vgs) is high and positive, a strong electric field is formed in the channel and the channel acquires a high conductivity. This is the “ON” state, allowing current flow between drain and source. If the gate voltage is low and negative, the electric field is weak and the channel acquires a low conductivity. This is the “OFF” state, where the drain and source current is reduced to a very small value.

Therefore, by controlling Vgs, the resistance between drain and source of AOU3N60 can be controlled and this control is used in many applications. This transistor is also ideal for high-speed switching, due to its low capacitance and fast switching speed.

Conclusion

AOU3N60 is a high voltage three-terminal silicon field effect transistor. It can be used as a simple switch to control loads up to 30A, as well as a booster function to speed up the reversing direction of the transistor. AOU3N60 has many applications, including automotive ignition, audio amplifier, switch mode power supply, DC servo motor and so on. The working principle of the AOU3N60 is based on the field effect principle, and the resistance between drain and source of AOU3N60 can be controlled by controlling its gate voltage.

The specific data is subject to PDF, and the above content is for reference

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