Allicdata Part #: | APL502B2G-ND |
Manufacturer Part#: |
APL502B2G |
Price: | $ 33.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 58A T-MAX |
More Detail: | N-Channel 500V 58A (Tc) 730W (Tc) Through Hole T-M... |
DataSheet: | APL502B2G Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 30.82490 |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | T-MAX™ [B2] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 730W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 29A, 12V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APL502B2G is a type of fast switching, low on-state resistance, N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). These devices can be used in a variety of different applications and the most common are power management and automated control. They are suitable for applications that require low gate charge, high drain-source breakdown voltage, low on-state resistance, fast switching speed, and high current-handling capability.
A MOSFET is a field-effect transistor (FET), which is composed of three regions: the source, the drain, and the gate. The gate is an insulated gate electrode containing a voltage-triggering input. When a voltage is applied to the gate, electrons are allowed to turn on the region connecting the source and the drain to the gate, thereby allowing current to flow through the FET. This is known as the on-state resistance.
The APL502B2G has a low on-state resistance of 8.7 mOhms, making it suitable for applications that require high current capabilities, such as DC-DC converters, joule and buck converters, and load controllers. The maximum drain source breakdown voltage is 600V and the typical gate charge is 20nC, which is much lower than most other types of MOSFETs. This ensures that the device can be switched on and off quickly, making it ideal for high frequency switching applications.
The APL502B2G is also suitable for power management and automated control applications, providing programmable logic controllers (PLCs), embedded control systems and flight controllers with the capability to switch quickly and efficiently. The device’s low on-state resistance and high-frequency switching capability make it ideal for controlling motors and appliances that require high levels of power.
In conclusion, the APL502B2G MOSFET is ideal for applications requiring fast switching, low on-state resistance, and high current-handling capability. The low gate charge makes it suitable for high-frequency switching applications, while its low on-state resistance and high drain-source breakdown voltage make it suitable for power management and automated control. The APL502B2G can provide reliable and efficient switching of motors and appliances, while its low gate charge ensures rapid on- and off-switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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