Allicdata Part #: | APL502J-ND |
Manufacturer Part#: |
APL502J |
Price: | $ 48.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 52A SOT-227 |
More Detail: | N-Channel 500V 52A (Tc) 568W (Tc) Chassis Mount IS... |
DataSheet: | APL502J Datasheet/PDF |
Quantity: | 301 |
1 +: | $ 43.82280 |
10 +: | $ 41.16610 |
30 +: | $ 39.30680 |
100 +: | $ 37.18210 |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 568W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 26A, 12V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APL502J is a type of transistor-based on field-effect technology that is specifically designed for applications that require low noise, low current operations and at the same time, high reliability. It is a type of high-frequency single-transistor with a maximum rated current of 20mA, making it suitable for use in low frequency switching applications. The APL502J also offers very high input impedance (greater than one megaohm) as well as good integrated forward current of 1A.
The structure of the APL502J transistor includes a two or three-layer field-effect structure. This structure includes a MOSFET (metal-oxide-semiconductor field-effect transistor), a diode, and a silicon body. The diode provides protection against reverse-current operation, while the MOSFET helps to ensure low-level gate current and high input impedance. The gate is connected to a voltage source, and the current flow is controlled by the gate voltage.
APL502J transistors are mainly used in applications requiring very low noise, such as gun detection and remote sensor operations, as well as in applications that requires low current and high reliability. They can also be used in high frequency switching applications.
The working principle of the APL502J is based on the fact that a transistor can be used to change the current flow in a circuit. By changing the voltage applied to the gate of the transistor, the resistance between the source and drain of the transistor is changed, and thus, the current flow in the circuit can be changed accordingly. This process is known as the depletion mode, or negative-gate current mode, of operation.
When the negative-gate current mode is used, the current flow is increased, and thus, the voltage applied to the transistor is increased. The increased voltage causes the drain to be more attracted to the source, leading to a faster switching time and lower circuit resistance. This type of operation is widely used because it provides low-noise operation and a low-current draw, compared to other transistor operations.
In order to ensure high reliability, APL502J utilizes a high breakdown voltage rating, which is usually rated for up to 200V. Additionally, the high input impedance helps to ensure that the circuit is not disrupted and produces low-noise operation. This also ensures that the APL502J is suitable for high frequency switching applications.
In summary, the APL502J is a type of high-frequency single-transistor that is specifically designed for applications that require low noise, low current operations and at the same time, high reliability. It is mainly used in applications involving low-noise operations such as gun detection and remote sensor operations, as well as in applications that require low current and high reliability. The high input impedance and high breakdown voltage rating also provides good reliability and low-noise operation in high frequency switching applications. The working principle of the APL502J is based on the depletion mode, more commonly known as the negative-gate current mode of operation.
The specific data is subject to PDF, and the above content is for reference
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