Allicdata Part #: | APT100GT120JRDQ4-ND |
Manufacturer Part#: |
APT100GT120JRDQ4 |
Price: | $ 36.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 123A 570W SOT227 |
More Detail: | IGBT Module NPT Single 1200V 123A 570W Chassis Mou... |
DataSheet: | APT100GT120JRDQ4 Datasheet/PDF |
Quantity: | 30 |
1 +: | $ 33.08760 |
10 +: | $ 30.93870 |
25 +: | $ 28.61360 |
100 +: | $ 26.82530 |
250 +: | $ 25.03700 |
Series: | Thunderbolt IGBT® |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 123A |
Power - Max: | 570W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 100A |
Current - Collector Cutoff (Max): | 200µA |
Input Capacitance (Cies) @ Vce: | 7.85nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT100GT120JRDQ4 is a type of insulated gate bipolar transistor (IGBT) module. This module is used for high frequency applications that require reliable operation and effective control. It consists of an insulated gate, one P-type and one N-type semiconductor and one pre-conditioned diode. The IGBT works in both switching and sensing circuits, providing the necessary power and control to the circuit.
In applications where high frequency performance is needed, the APT100GT120JRDQ4 can provide the necessary power and control. For example, the IGBT module can be used to drive motors, transducers and actuators. It can also be used as a switch in power distribution systems, in order to provide a smooth transition between sources and loads.
The module can also be used in the control systems of machines and industrial equipment. Its performance allows for highly efficient operation and accurate control. In addition, the IGBT module can be used to manage large electrical loads in industrial plants and other power systems.
The working principle of an IGBT module is relatively simple. When the gate voltage is turned on, the junction between the two semiconductors will become forward biased. This will allow the flow of current from the negative electrode to the positive electrode. The current will continue to flow until the gate voltage is turned off, at which point the gate will become reverse biased and the current will subside.
The advantage of the IGBT module is that it can operate at a rapid speed, allowing for highly efficient operation of various electrical devices. In addition, the module can be used to switch large electrical loads quickly and efficiently. The APT100GT120JRDQ4 is an excellent choice for those requiring an efficient and reliable high frequency IGBT module.
The specific data is subject to PDF, and the above content is for reference
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