Allicdata Part #: | APT18F60B-ND |
Manufacturer Part#: |
APT18F60B |
Price: | $ 3.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 18A TO-247 |
More Detail: | N-Channel 600V 19A (Tc) 335W (Tc) Through Hole TO-... |
DataSheet: | APT18F60B Datasheet/PDF |
Quantity: | 1000 |
120 +: | $ 3.59037 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 335W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
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APT18F60B is a N-channel, Enhancement mode, Insight MOSFET Transistor. It is a "single" type FET (Field effect transistor). This power transistor is available in industry standard TO-220F and D2PAK surface-mount packages that are optimized for high current switching applications, making it an ideal choice for power management and power control purposes.
This 3-pin transistor has gate, drain, and source pins. It has a maximum gate-source voltage of +/- 25V, a maximum drain-source voltage of 500V and a maximum drain current of 18A. The APT18F60B\'s maximum drain-source on-state resistance is 0.007 ohm and its load capacity is 15.4A.
The APT18F60B is designed primarily as a switching transistor. This type of FET is used in applications that require quick switching times, like in the field of communications, power supplies and audio amplifiers. Additionally, the transistor is great for use in high speed semiconductor switches and gate drive applications.
The working principle of a FET is based on the fact that the current flowing through a channel is affected by the voltage applied to its gate. The channel is composed of n- or p- (negatively or positively charged) type material, depending on the type of FET. A MOSFET is an insulated gate FET that uses a thin insulating layer between the gate and the conductive channel. When a voltage is applied to the gate of the MOSFET, the electric field created by the charge on the gate induces a charge in the channel, which in turn affects the current flow through the channel.
In the case of the APT18F60B, when a voltage is applied to the gate, charge carriers (electrons) are attracted to the gate, and this causes the channel to become conductive. As a result, current will flow from the drain to the source. By controlling the voltage on the gate, the amount of current flowing through the APT18F60B can be varied. This is an important characteristic of the power transistor, as it is ideal for controlling power demand or switching applications.
The APT18F60B MOSFET transistor is suitable for a wide range of applications such as AC/DC converters and switching power supplies, telecom inverters, power supplies and industrial automation systems. This power transistor is a high efficient, economical and reliable solution for power control and switching applications.
The specific data is subject to PDF, and the above content is for reference
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