Allicdata Part #: | APT15GN120BDQ1G-ND |
Manufacturer Part#: |
APT15GN120BDQ1G |
Price: | $ 4.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 45A 195W TO247 |
More Detail: | IGBT Trench Field Stop 1200V 45A 195W Through Hole... |
DataSheet: | APT15GN120BDQ1G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
90 +: | $ 4.28792 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 45A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Power - Max: | 195W |
Switching Energy: | 410µJ (on), 950µJ (off) |
Input Type: | Standard |
Gate Charge: | 90nC |
Td (on/off) @ 25°C: | 10ns/150ns |
Test Condition: | 800V, 15A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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Transistors can be divided into both bipolar junction transistors and insulated gate bipolar transistors — more commonly known as IGBT transistors. IGBT transistors then can be further divided into both single and double types. The APT15GN120BDQ1G is an example of a single type IGBT transistor.
Applications for this device run the gamut from consumer electronics and appliances to industrial equipment. Specifically, the APT15GN120BDQ1G is used to switch and amplify input signals to drive motors or other types of equipment, as well as in high-efficiency motor control. This device is made up of both P and N channel chips, which allows it to handle extremely high power demands — up to 1.6 kilowatts of power.
The APT15GN120BDQ1G is designed to require high-frequency switching capabilities under extreme ambient temperatures. Its robust insulation and low power loss make it a good choice for industrial equipment and other higher-power applications. It’s also capable of quickly responding to input signals, making it a suitable choice for applications with frequent on/off cycles.
The APT15GN120BDQ1G works by having an insulated base between the collector and emitter, allowing heat dissipation that helps prevent breakdown in the transistor. The voltage supplied to the gate activates the IGBT while the current flows between the collector and emitter. When the gate voltage is reduced, however, the IGBT shuts off and current stops flowing. The device’s gate is controlled by an external voltage, which helps to ensure that the IGBT does not overheat or become damaged due to prolonged usage.
The APT15GN120BDQ1G is just one example of a single type IGBT transistor. It’s designed to handle high power demands, maintain high-frequency switching capabilities, and quickly respond to input signals. Its robust insulation and low power loss make it an ideal choice for industrial applications and other applications with frequent on/off cycles. By using an insulated base to prevent heat accumulation, the APT15GN120BDQ1G is able to protect itself from damage due to prolonged usage. It’s capable of supplying up to 1.6 kilowatts of power while ensuring reliable performance.
The specific data is subject to PDF, and the above content is for reference
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