APT13GP120BDQ1G

Series:	POWER MOS 7®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	41A
Current - Collector Pulsed (Icm):	50A
Vce(on) (Max) @ Vge, Ic:	3.9V @ 15V, 13A
Power - Max:	250W
Switching Energy:	115µJ (on), 165µJ (off)
Input Type:	Standard
Gate Charge:	55nC
Td (on/off) @ 25°C:	9ns/28ns
Test Condition:	600V, 13A, 5 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

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Introduction

APT13GP120BDQ1G is a single Insulated Gate Bipolar Transistor (IGBT) specifically designed for general-purpose applications. It is a new type of semiconductor switching device suitable for high current, high voltage, and high frequency power semiconductor applications. This high power switch is built using field-stop termination process to provide higher breakdown voltage and low on-state current. It can handle a DC voltage of up to 1200 volts, and it can carry a peak current of up to 144 amps. In this article, we will discuss the application fields for APT13GP120BDQ1G, as well as its working principle.

Application Fields for APT13GP120BDQ1G

APT13GP120BDQ1G is suitable for a wide range of applications in industrial, automotive, and consumer electronics. In industrial applications, APT13GP120BDQ1G can be used in uninterruptible power supplies (UPS), welding machines, motor control systems, and power inverters. In automotive applications, APT13GP120BDQ1G can be used in starter/generator circuits, battery charging systems, fuel injection systems, and motor control systems. In consumer electronics, APT13GP120BDQ1G can be used in home security systems, air conditioning systems, computer power supplies, and audio and video transmission systems.

Working Principle

APT13GP120BDQ1G is based on the insulating gate bipolar transistor (IGBT) technology. It is an electronic switch designed for high current, high voltage, and high frequency applications. IGBTs have the advantages of both bipolar and field-effect transistors. Theg allow a high on-state current, even when switching at high frequency, and they can handle high voltage as well. When the gate of an IGBT is in the “OFF” state, that is, when it is not driven by a control signal, the device is in a high impedance state. The gate-emitter junction is reverse biased, and the collector-emitter junction behaves like an open circuit. This state keeps the device off, and no collector current can flow. In the “ON” state, a control signal is applied to the gate of the switch which turns it on. This forward biases the gate-emitter junction, and allows collector current to flow. The collector-emitter junction behaves like a closed switch, and the device can conduct. The speed at which APT13GP120BDQ1G performs the switching operation is known as its switching speed. The switching speed is determined by its gate charge characteristics and its internal structure.

Conclusion

APT13GP120BDQ1G is a single IGBT specifically designed for general-purpose applications. It can handle a DC voltage of up to 1200 volts and a peak current of up to 144 amps. It is suitable for a wide range of applications in industrial, automotive, and consumer electronics. The working principle of the device is based on IGBT technology, and its switching speed is determined by its gate charge characteristics and its internal structure.

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