APT13005SU-G1 Allicdata Electronics
Allicdata Part #:

APT13005SU-G1DI-ND

Manufacturer Part#:

APT13005SU-G1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 450V 3.2A TO126
More Detail: Bipolar (BJT) Transistor NPN 450V 3.2A 4MHz 20W Th...
DataSheet: APT13005SU-G1 datasheetAPT13005SU-G1 Datasheet/PDF
Quantity: 3168
Stock 3168Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3.2A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1V @ 750mA, 3A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 20W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Description

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Bipolar junction transistors (BJT) are three-terminal devices used for amplification and switching purposes. The type of BJT used in most general applications is the single BJT. The most common type of single BJT is the APT13005SU-G1. This device is an NPN silicon-based transistor with an integrated resistive joint and an input voltage of 80V.

The APT13005SU-G1 is widely used in the field of automotive electronics and photovoltaic inverters, primarily in applications that require high-power switching and current control. This sheath can handle a maximum collector current of up to 20A, with a maximum voltage of 70V and a maximum power dissipation of 600W.

In addition to its automotive and photovoltaic applications, the APT13005SU-G1 has been used in a variety of industrial applications including power supplies, LED drivers, and LED lighting systems. It has proven especially useful in DMX lighting systems, where the need for high-power switching and current control is paramount.

As with all BJTs, the APT13005SU-G1 works on the principle of current gain. When a small current is applied to the base terminal of the device, it causes a much larger current to flow from the collector to the emitter. This amplified current is used to power or switch other devices or actuate other mechanisms.

To facilitate this process, the APT13005SU-G1 incorporates a high-tech integrated resistive joint at its base-emitter terminal that ensures a stable voltage drop across the device under any given conditions. This helps to maintain the current gain and ensures the device operates more efficiently.

The APT13005SU-G1 is further equipped with a voltage-programmable gain option that enables electronic engineers to adjust the current gain of the device. This feature is especially useful in automotive and photovoltaic applications, where the power requirements often vary frequently.

Lastly, the APT13005SU-G1 is equipped with an integrated thermal shutdown system that is designed to prevent the device from overheating and overloading. This system operates by sensing the temperature at the device\'s junction and then automatically switching off the device when the temperature exceeds a certain level.

In conclusion, the APT13005SU-G1 is an ideal single BJT for applications that require high-power switching and current control. It is widely used in the automotive, photovoltaic, and industrial sectors, and is equipped with a high-tech integrated resistive joint, voltage-programmable gain, and an integrated thermal shutdown system, allowing it to operate efficiently and reliably under any conditions.

The specific data is subject to PDF, and the above content is for reference

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