APT13GP120KG

Series:	POWER MOS 7®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	41A
Current - Collector Pulsed (Icm):	50A
Vce(on) (Max) @ Vge, Ic:	3.9V @ 15V, 13A
Power - Max:	250W
Switching Energy:	114µJ (on), 165µJ (off)
Input Type:	Standard
Gate Charge:	55nC
Td (on/off) @ 25°C:	9ns/28ns
Test Condition:	600V, 13A, 5 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220 [K]

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Introduction

IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor that combines the properties of MOSFETs and BJTs. IGBTs are used in various applications where higher speeds, power, and efficiency are required, such as in switching applications like electric motors, power converters, and high-frequency power amplifiers. The APT13GP120KG is a single IGBT that is designed specifically for a variety of applications including high-power transistor applications, automotive applications, and industrial applications. This article will discuss the application field and working principle of the APT13GP120KG.

Application Field of APT13GP120KG

The APT13GP120KG is a single IGBT that is designed for use in a wide range of applications. It is ideal for use in high-power transistor applications including motor control, uninterruptible power supplies (UPS), power conditioning, and power conversion. It also has automotive applications, such as automotive power systems, ADAS, and traction motors. Furthermore, it is suitable for use in industrial applications such as compressor motors, spraying equipment, machine tools, and industrial lasers.The APT13GP120KG offers a number of advantages compared to other IGBTs. It provides an optimized gate driving output, with low gate drive signal loss, making it ideal for high-speed applications such as motor drive systems. It also has a wide temperature range, making it suitable for use in a variety of environments. Furthermore, it has integrated EMI filters and other protection functions, making it suitable for use in hazardous environments.

Working Principle of APT13GP120KG

The APT13GP120KG is a single IGBT that is designed to combine the properties of MOSFETs and BJTs. It is a type of transistor that utilizes an insulated gate to control the flow of current between the drain and the source. The insulated gate is controlled by a gate voltage, which can either be a positive voltage or a negative voltage depending on the type of transistor.When a positive voltage is applied to the gate of the APT13GP120KG, it induces a negative charge on the surface of the gate, creating a depletion region. This depletion region prevents current from flowing from the drain to the source, thereby blocking the flow of current and turning off the transistor.Conversely, when a negative voltage is applied to the gate of the APT13GP120KG, it induces a positive charge on the surface of the gate, which allows current to flow from the drain to the source, thereby turning on the transistor. The transistor will remain conductive provided the gate voltage is maintained.

Conclusion

The APT13GP120KG is a single IGBT that is designed to be used in a variety of applications. It is suitable for use in high-power transistor applications, automotive applications, and industrial applications. It offers optimized gate driving output, low gate drive signal loss, and a wide temperature range, making it ideal for high-speed applications. Furthermore, it has integrated EMI filters and other protection functions, making it suitable for use in hazardous environments. The working principle of the APT13GP120KG is based on the application of either a positive or negative voltage to the gate of the transistor in order to control the flow of current from the drain to the source.

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