APT15GT120BRDQ1G Discrete Semiconductor Products |
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Allicdata Part #: | APT15GT120BRDQ1G-ND |
Manufacturer Part#: |
APT15GT120BRDQ1G |
Price: | $ 4.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 36A 250W TO247 |
More Detail: | IGBT NPT 1200V 36A 250W Through Hole TO-247 [B] |
DataSheet: | APT15GT120BRDQ1G Datasheet/PDF |
Quantity: | 122 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.15170 |
10 +: | $ 3.73464 |
25 +: | $ 3.40276 |
100 +: | $ 3.07068 |
250 +: | $ 2.82172 |
500 +: | $ 2.57274 |
1000 +: | $ 2.24078 |
Series: | Thunderbolt IGBT® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 36A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 15A |
Power - Max: | 250W |
Switching Energy: | 585µJ (on), 260µJ (off) |
Input Type: | Standard |
Gate Charge: | 105nC |
Td (on/off) @ 25°C: | 10ns/85ns |
Test Condition: | 800V, 15A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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The APT15GT120BRDQ1G is a single insulated gate bipolar transistor (IGBT) device that is widely used for a variety of applications. The device is comprised of two complementary bipolar transistors, with an insulation layer, rather than metal gates, controlling the bipolar transistors. This provides the perfect combination of control and power for applications in power control, motor control and switching.
The APT15GT120BRDQ1G offers a number of important features and benefits. First, the device has a low turn-on voltage and low IGBT gate threshold voltage, making it ideal for applications that require precise control of switching and pulse width modulation. Second, the device features fast switching, allowing for faster response times in control systems. Finally, the device is designed to provide improved efficiency compared to traditional transistor technologies.
The key to the operation of the APT15GT120BRDQ1G is its insulated gate. When the gate is left open, current is allowed to flow through the transistor, resulting in a voltage drop across the transistor\'s collector-emitter terminal. When a voltage is applied to the gate (gate-emitter), the insulation layer turns on, which switches off the current flowing through the transistor. This switching off of the current is known as the transistor being turned \'on\'.
The bipolar transistor elements of the APT15GT120BRDQ1G provide higher gains than that of standard BJT transistors and therefore improve the efficiency of the system when driving higher currents. Additionally, since the devices use insulated gate technology, a separate driver circuit is not needed to drive the gate of the devices.
In terms of applications, the APT15GT120BRDQ1G is widely used in applications such as motor control, power electronics and switching, due to its fast switching, high efficiency and its ability to provide precise control of switching and pulse width modulation. Additionally, the device is popular for applications such as electric vehicle and renewable energy systems due its high efficiency and low gate threshold voltage.
In conclusion, the APT15GT120BRDQ1G is a very versatile and effective device for a variety of applications. It provides important features such as fast switching, improved efficiency compared to traditional transistors, and low gate threshold voltage, making it ideal for applications in motor control, power electronics, switching and electric vehicle systems.
The specific data is subject to PDF, and the above content is for reference
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