APT15GT120BRDQ1G Allicdata Electronics

APT15GT120BRDQ1G Discrete Semiconductor Products

Allicdata Part #:

APT15GT120BRDQ1G-ND

Manufacturer Part#:

APT15GT120BRDQ1G

Price: $ 4.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 36A 250W TO247
More Detail: IGBT NPT 1200V 36A 250W Through Hole TO-247 [B]
DataSheet: APT15GT120BRDQ1G datasheetAPT15GT120BRDQ1G Datasheet/PDF
Quantity: 122
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.15170
10 +: $ 3.73464
25 +: $ 3.40276
100 +: $ 3.07068
250 +: $ 2.82172
500 +: $ 2.57274
1000 +: $ 2.24078
Stock 122Can Ship Immediately
$ 4.57
Specifications
Series: Thunderbolt IGBT®
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Power - Max: 250W
Switching Energy: 585µJ (on), 260µJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 10ns/85ns
Test Condition: 800V, 15A, 5 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Description

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The APT15GT120BRDQ1G is a single insulated gate bipolar transistor (IGBT) device that is widely used for a variety of applications. The device is comprised of two complementary bipolar transistors, with an insulation layer, rather than metal gates, controlling the bipolar transistors. This provides the perfect combination of control and power for applications in power control, motor control and switching.

The APT15GT120BRDQ1G offers a number of important features and benefits. First, the device has a low turn-on voltage and low IGBT gate threshold voltage, making it ideal for applications that require precise control of switching and pulse width modulation. Second, the device features fast switching, allowing for faster response times in control systems. Finally, the device is designed to provide improved efficiency compared to traditional transistor technologies.

The key to the operation of the APT15GT120BRDQ1G is its insulated gate. When the gate is left open, current is allowed to flow through the transistor, resulting in a voltage drop across the transistor\'s collector-emitter terminal. When a voltage is applied to the gate (gate-emitter), the insulation layer turns on, which switches off the current flowing through the transistor. This switching off of the current is known as the transistor being turned \'on\'.

The bipolar transistor elements of the APT15GT120BRDQ1G provide higher gains than that of standard BJT transistors and therefore improve the efficiency of the system when driving higher currents. Additionally, since the devices use insulated gate technology, a separate driver circuit is not needed to drive the gate of the devices.

In terms of applications, the APT15GT120BRDQ1G is widely used in applications such as motor control, power electronics and switching, due to its fast switching, high efficiency and its ability to provide precise control of switching and pulse width modulation. Additionally, the device is popular for applications such as electric vehicle and renewable energy systems due its high efficiency and low gate threshold voltage.

In conclusion, the APT15GT120BRDQ1G is a very versatile and effective device for a variety of applications. It provides important features such as fast switching, improved efficiency compared to traditional transistors, and low gate threshold voltage, making it ideal for applications in motor control, power electronics, switching and electric vehicle systems.

The specific data is subject to PDF, and the above content is for reference

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