APT20GF120BRG Allicdata Electronics
Allicdata Part #:

APT20GF120BRG-ND

Manufacturer Part#:

APT20GF120BRG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 32A 200W TO247
More Detail: IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]
DataSheet: APT20GF120BRG datasheetAPT20GF120BRG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 200W
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: 17ns/105ns
Gate Charge: 95nC
Input Type: Standard
Switching Energy: 2.7mJ
Series: --
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Current - Collector Pulsed (Icm): 64A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT20GF120BRG is a type of Field Stop Insulated Gate Bipolar Transistor (FS-IGBT). It is a low voltage power transistor that uses a gate voltage to control the level of current flowing through the device\'s collector and emitter terminals. The gate voltage is also used to stop the current flow when the gate voltage drops below a certain threshold. This makes it ideal for controlling the output of power supplies, inverters and motor drives. It is also used in current and voltage regulators, lighting controllers, motor control circuits, and other applications.

The APT20GF120BRG has an N-channel structure with a field-stop IGBT that is structurally different from conventional IGBTs. The gate-emitter junction of a field-stop IGBT is actively stopped when the gate drive voltage is applied, in order to control the high-dense on-state high current. This feature also reduces switching losses, increases the safe operating area, and improves operational safety. Additionally, the field-stop IGBT offers high frequency switching performance, making it an ideal power device for driving high frequency switch-mode power supplies and motor drives.

The APT20GF120BRG has an RTH JC of 4.2°C/W, a minimum guaranteed on-state current of 17A, a DC current gain of 115 and a collector-emitter saturation voltage of 0.9V. It features a high-speed switching performance, with a maximum switching frequency of 15kHz and a maximum reverse recovery time of 2µs. The device has a maximum operating temperature of 150°C and a minimum operating temperature of –40°C.

The working principle of the APT20GF120BRG is simple. When the gate voltage is applied, the gate-emitter junction is actively stopped and the current starts to flow from the collector to the emitter. As the gate voltage increases, the current increases further, allowing more current to flow from the collector to the emitter. Conversely, when the gate voltage drops below a certain threshold, the gate-emitter junction is then actively stopped and the current stops flowing.

The APT20GF120BRG is primarily used in high-power applications, such as power supplies, inverters and motor drives. It is also suitable for current and voltage regulators, lighting controllers, motor control circuits, and other switching applications. Its low on-state resistance and high-speed switching performance make it ideal for controlling high-frequency switching power supplies and motor drives.

The specific data is subject to PDF, and the above content is for reference

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