Allicdata Part #: | APT22F80B-ND |
Manufacturer Part#: |
APT22F80B |
Price: | $ 9.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 22A TO-247 |
More Detail: | N-Channel 800V 23A (Tc) 625W (Tc) Through Hole TO-... |
DataSheet: | APT22F80B Datasheet/PDF |
Quantity: | 76 |
1 +: | $ 8.42310 |
30 +: | $ 6.90814 |
120 +: | $ 6.23412 |
510 +: | $ 5.22318 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4595pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT22F80B is a single source field-effect transistor (FET) that can be used for a variety of applications. Its primary use is for large-signal switching, RF signal amplification, and dynamic impedance adjustment.
The APT22F80B is part of the 22F80B family, which includes two devices. The first device, a unipolar N-channel FET, is the APT22F80B-UM, while the second, a bipolar P-channel FET, is the APT22F80B-BP. Each device is composed of an array of peripheral components and an integrated signal processing circuit.
A FET, or field-effect transistor, is a type of transistor that uses a small electrical control signal to regulate the current flowing through a larger conduction current between two electrodes. This control signal, also known as the gate, is used to control the flow of the conduction current through a semiconductor channel between the two electrodes. The APT22F80B incorporates this technology with a three electrode design, consisting of source, gate, and drain.
The APT22F80B operates using three basic operating principles. First, it amplifies the gate signal. Second, it allows conduction current to flow in the forward and reverse direction between the source and drain. Third, when the gate voltage is adjusted, the conduction current is varied.
The APT22F80B can be used in many different types of applications. It can be used in telecommunication and power applications, such as amplifiers, drivers, and protection circuits. It is also used in digital logic circuits, such as threshold, logic, and latch circuits. Additionally, the APT22F80B is often used for RF signal amplification, dynamic impedance adjustment, and on-off switching in automotive, industrial and medical applications.
The APT22F80B is designed with features to ensure reliable performance including: high surface mount resistance, operating temperature range from -40°C to 125°C, low-voltage operation and high speed performance up to 150 MHz.
The APT22F80B is a reliable, high-performance single source FET that is suitable for many applications. The device offers high gain, low noise, and fast switching times, making it an ideal choice for a wide range of applications. With its integrated signal processing circuit, the APT22F80B can provide low-power, reliable operation in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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