Allicdata Part #: | APT20M11JVR-ND |
Manufacturer Part#: |
APT20M11JVR |
Price: | $ 38.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 175A SOT-227 |
More Detail: | N-Channel 200V 175A (Tc) 700W (Tc) Chassis Mount I... |
DataSheet: | APT20M11JVR Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 35.19370 |
Vgs(th) (Max) @ Id: | 4V @ 5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | POWER MOS V® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 175A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT20M11JVR is a single-gate field-effect transistor (FET) designed for use in electronic circuits. This type of transistor is capable of amplifying or controlling current flow through the gate channel and is used in many different applications. This article will discuss the application field and working principle of the APT20M11JVR.
The APT20M11JVR is typically used in power amplifier circuits for the purpose of amplifying signals. This type of transistor provides current gain and voltage gain, which allows for amplification of both the input and output signal strength. The APT20M11JVR is most commonly used in circuits where low power consumption, high input/output gain, low noise and low distortion are desired. This type of transistor is also suitable for use in low power logic circuits, where the selectivity and low noise characteristics are beneficial.
The APT20M11JVR is a MOSFET (Metal Oxide Silicon Field Effect Transistor), which is a type of FET that uses a gate voltage to control the flow of current through its electrical channel. The gate voltage controls the current flow through the transistor by creating a uniform field over the entire surface of the MOSFET. This uniform field causes the transistor to act as an amplifier, as the field increases, the current increases. As this happens, the transistor amplifies both the input and output signal of an electronic signal.
The working principle of the APT20M11JVR is based on the accumulation of electric charges. As the gate voltage is applied to the transistor, the electric charges accumulate underneath the gate insulator of the MOSFET. This accumulation of charge is known as the \'threshold voltage\' and causes a voltage difference across the MOSFET’s channel, thus allowing current flow between the source and drain of the transistor.
The accumulation of charge on the transistor occurs when the gate voltage is above the threshold voltage. This increase in threshold voltage causes an increase in the conducting channel from source to drain, causing an increase in the current flow. The increase in current flow will cause an increase in the output signal. Conversely, reducing the gate voltage will reduce the amount of charge on the MOSFET and thus reduce the current flow. This will cause a decrease in the output signal.
Other factors that affect the performance of the APT20M11JVR include the gate-source capacitance, the orientation of the MOSFET’s electrical channel and the presence of parasitic capacitances. Together, these factors can have a significant impact on the performance of the APT20M11JVR and should be taken into consideration when designing a circuit that uses this type of transistor.
In conclusion, the APT20M11JVR is a single-gate FET that is suitable for use in many different applications. This type of FET is capable of amplifying or controlling current flow through the gate and is best used in circuits where low power consumption, high input/output gain, low noise and low distortion are desired. The working principle of the APT20M11JVR is based on the accumulation of electric charges, which is then converted into a voltage difference over the MOSFET’s channel, allowing for current flow between the source and drain of the transistor. Other factors such as gate-source capacitance and the presence of parasitic capacitances can also affect the performance of the APT20M11JVR, and should be taken into consideration when designing a circuit that uses this type of transistor.
The specific data is subject to PDF, and the above content is for reference
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