APT23F60B Allicdata Electronics
Allicdata Part #:

APT23F60B-ND

Manufacturer Part#:

APT23F60B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 23A TO-247
More Detail: N-Channel 600V 24A (Tc) 415W (Tc) Through Hole TO-...
DataSheet: APT23F60B datasheetAPT23F60B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 415W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Validation

MOSFETs (Metal-oxide-semiconductor field-effect transistors) are the most common type of transistor used in modern electronics devices. The APT23F60B is a single MOSFET designed for use in a variety of applications, such as digital logic circuits, analog circuits and DC-DC converters. This article describes the features, application field and working principle of the APT23F60B MOSFET.

The APT23F60B is a low-side single N-channel MOSFET capable of sustaining high-currents and providing fast switching rates. This single MOSFET has a maximum drain-source voltage of 60 V, a maximum drain current of 77A at 25°C and an on-state resistance of 0.056 ohm. It is available in a TO-220AB package, which is both robust and cost effective. The APT23F60B is also RoHS compliant and suitable for lead (Pb) and lead-free soldering.

Due to its features, the APT23F60B MOSFET is suitable for a variety of applications including automotive, consumer electronics, industrial and solar power inverters. The versatile APT23F60B MOSFET is designed as a switch in buck, boost and inverting topologies. It is also suitable for use in DC-DC converters, resonant converters and low-frequency switching circuits. Additionally, it can act as a distortion-free electronic switch in musical instrument amplifiers and sound processing applications.

MOSFETs operate by using a voltage applied to the gate to control the flow of current from the source to the drain. When a small voltage is applied to the gate, the MOSFET is turned on and it allows current to flow. The APT23F60B MOSFET relies upon this gate-control principle to provide low on-resistance, low gate charge and fast switching characteristics. It enables very low power dissipation and delivers high current-handling capability in a wide range of applications.

In summary, the APT23F60B is a single low-side N-channel MOSFET capable of sustaining high-currents and providing fast switching rates. It is suitable for a variety of automotive, consumer electronics, industrial and solar power applications. The APT23F60B MOSFET is designed as a switch in buck, boost and inverting topologies and it operates utilizing the gate-control mechanism. This MOSFET can be used in DC-DC converters, resonant converters and low-frequency switching circuits, as well as in musical instrument amplifiers and sound processing applications.

The specific data is subject to PDF, and the above content is for reference

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