| Allicdata Part #: | APT23F60B-ND |
| Manufacturer Part#: |
APT23F60B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 600V 23A TO-247 |
| More Detail: | N-Channel 600V 24A (Tc) 415W (Tc) Through Hole TO-... |
| DataSheet: | APT23F60B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 [B] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 415W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4415pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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ValidationMOSFETs (Metal-oxide-semiconductor field-effect transistors) are the most common type of transistor used in modern electronics devices. The APT23F60B is a single MOSFET designed for use in a variety of applications, such as digital logic circuits, analog circuits and DC-DC converters. This article describes the features, application field and working principle of the APT23F60B MOSFET.
The APT23F60B is a low-side single N-channel MOSFET capable of sustaining high-currents and providing fast switching rates. This single MOSFET has a maximum drain-source voltage of 60 V, a maximum drain current of 77A at 25°C and an on-state resistance of 0.056 ohm. It is available in a TO-220AB package, which is both robust and cost effective. The APT23F60B is also RoHS compliant and suitable for lead (Pb) and lead-free soldering.
Due to its features, the APT23F60B MOSFET is suitable for a variety of applications including automotive, consumer electronics, industrial and solar power inverters. The versatile APT23F60B MOSFET is designed as a switch in buck, boost and inverting topologies. It is also suitable for use in DC-DC converters, resonant converters and low-frequency switching circuits. Additionally, it can act as a distortion-free electronic switch in musical instrument amplifiers and sound processing applications.
MOSFETs operate by using a voltage applied to the gate to control the flow of current from the source to the drain. When a small voltage is applied to the gate, the MOSFET is turned on and it allows current to flow. The APT23F60B MOSFET relies upon this gate-control principle to provide low on-resistance, low gate charge and fast switching characteristics. It enables very low power dissipation and delivers high current-handling capability in a wide range of applications.
In summary, the APT23F60B is a single low-side N-channel MOSFET capable of sustaining high-currents and providing fast switching rates. It is suitable for a variety of automotive, consumer electronics, industrial and solar power applications. The APT23F60B MOSFET is designed as a switch in buck, boost and inverting topologies and it operates utilizing the gate-control mechanism. This MOSFET can be used in DC-DC converters, resonant converters and low-frequency switching circuits, as well as in musical instrument amplifiers and sound processing applications.
The specific data is subject to PDF, and the above content is for reference
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APT23F60B Datasheet/PDF