Allicdata Part #: | APT25GN120B2DQ2G-ND |
Manufacturer Part#: |
APT25GN120B2DQ2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 67A 272W TMAX |
More Detail: | IGBT NPT, Trench Field Stop 1200V 67A 272W Through... |
DataSheet: | APT25GN120B2DQ2G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT, Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 67A |
Current - Collector Pulsed (Icm): | 75A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
Power - Max: | 272W |
Switching Energy: | 2.15µJ (off) |
Input Type: | Standard |
Gate Charge: | 155nC |
Td (on/off) @ 25°C: | 22ns/280ns |
Test Condition: | 800V, 25A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 Variant |
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The APT25GN120B2DQ2G is a high power, low voltage, insulated-gate bipolar transistor (IGBT). It is designed to switch and control high power, high current applications. The IGBT is a 3-terminal device; the source, gate, and emitter terminals control and carry current. The source is where the current enters the device, the gate controls the flow of current, and the emitter is the outlet for the current.
The APT25GN120B2DQ2G is of the single-packaged range, meaning that it does not require an external driver in order to operate correctly. This allows for a simpler design for the system, as it can only use one component instead of multiple. The device has a start-up voltage of 15V and a collector current of 25A. It has on-state voltage drop of 1.2V, a maximum junction temperature of 175°C, and a maximum collector-emitter voltage of 1440V.
The APT25GN120B2DQ2G is a popular choice due to its ease of use and good performance. It can be used in a variety of applications, including industrial, motor, robotics, and AC/DC motor control. It is well-suited to applications where low power, high current and speed control are required. It also suits applications that require fast switching and high load currents.
The essential working principle of the APT25GN120B2DQ2G is simple. When current is applied to the gate terminal, electrons are released from the gate and travel to the emitter. As the electrons flow to the emitter, the current flow from the collector is interrupted and the collector-to-emitter current is blocked. This reduces the voltage drop across the collector-emitter terminals, allowing the transistor to switch very quickly. The device also has a high switching speed, which helps to reduce power losses, making it suitable for use in a variety of power control systems.
In summary, the APT25GN120B2DQ2G is a robust and reliable IGBT device that is designed for high power, high current applications. It has a start-up voltage of 15V and a collector current of 25A, with an on-state voltage drop of 1.2V. It can be used in many applications, including industrial, motor, robotics, and AC/DC motor control, as well as fast switching and high load currents. The working principle of the IGBT device is relatively simple and enables the device to switch very quickly. For these reasons, the APT25GN120B2DQ2G is a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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