APT20GN60BG Discrete Semiconductor Products |
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| Allicdata Part #: | APT20GN60BG-ND |
| Manufacturer Part#: |
APT20GN60BG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 600V 40A 136W TO247 |
| More Detail: | IGBT Trench Field Stop 600V 40A 136W Through Hole ... |
| DataSheet: | APT20GN60BG Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Power - Max: | 136W |
| Supplier Device Package: | TO-247 [B] |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Test Condition: | 400V, 20A, 4.3 Ohm, 15V |
| Td (on/off) @ 25°C: | 9ns/140ns |
| Gate Charge: | 120nC |
| Input Type: | Standard |
| Switching Energy: | 230µJ (on), 580µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 20A |
| Current - Collector Pulsed (Icm): | 60A |
| Current - Collector (Ic) (Max): | 40A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The APT20GN60BG is a high-power insulated gate bipolar transistor (IGBT) module. It has a higher soft saturation voltage, superior ruggedness, and low power dissipation. The features of the device make it suitable for a variety of applications, such as electric motor controls, UPS, UPS accessories, power factor correction, power supplies, and other industrial and consumer applications.
The APT20GN60BG is a single IGBT module, meaning it has a single IGBT chip which is then mounted to a unipolar module. This module is made up of three active components: a collector, an emitter, and a gate. The collector is responsible for providing the current for the device, the emitter supplies the carier concentration of the device, and the gate controls the biasing of the device. The collector and emitter are connected via a high current efficient device which allows current to flow when the collector is at a higher voltage than the emitter. The gate is then connected between the collector and emitter, allowing the device to be biased on or off.
The APT20GN60BG is designed for low switching losses and is an ideal choice for high-efficiency applications. It has a high current carrying capability, thus providing a high power level and enabling the user to optimize an application for increased efficiency. This module is capable of withstanding an operating temperature range from -40°C to 125°C. Additionally, the device has a wide range of safe operating area, improved junction temperature ratings, and a high immunity to short-circuit current.
The APT20GN60BG is designed for a wide range of power applications, offering good on and off-state properties. With a reverse recovery time of less than 400ns, and a peak current rating of 1200A at 125°C, the device is suitable for applications requiring fast and accurate switching. It is also compatible with gate drivers such as the GS7000 series, enabling the user to control the device’s on and off states.
The APT20GN60BG is a versatile device with applications in many areas, including motor control, UPS, UPS accessories, power factor correction, power supplies, and other industrial and consumer applications. It is a cost-effective solution for many applications because of its high current-carrying capability and a wide range of safe operating area. With its fast switching capabilities and reliable on and off state properties, the APT20GN60BG is an ideal choice for any application requiring a high power level and a high efficiency.
The specific data is subject to PDF, and the above content is for reference
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APT20GN60BG Datasheet/PDF