APT40M42JN

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The APT40M42JN is a N-channel Power MOSFET designed to offer excellent drain-to-source which increases with drain current increasing. This device is designed specifically for high-frequency switch-mode power supplies, dc-ac converters, general low power switching, adjustable speed motor controls and other industrial applications. It can also be used for the on/off control of server power applications.

Features

• For general purpose switching applications
• Operating voltage up to 400V
• High frequency switching
• Low power loss in the on-state; typical RDS(on) of 0.14Ω
• Excellent switching characteristics
• High surge current capability
• High commutating speed

Applications

• High frequency switch-mode power supplies
• DC-AC converters
• General low power switching
• Adjustable speed motor controls
• Industrial applications
• Server power applications

Working Principle

The APT40M42JN is a silicon carbide (SiC) power MOSFET transistor. It is used as a switch that is capable of conducting high currents and is capable of switching at high frequency. The device is based on a normally-off capability and is triggered by a positive voltage applied on the gate relative to the source. This voltage is required to overcome the threshold voltage to turn on the MOSFET and accomplish a high-capacity switch application.

Unlike an insulated gate bipolar transistor (IGBT), the APT40M42JN is electrically isolated and consists of an insulated gate field effect transistor. This device is constructed on a reliable silicon wafer with its source and drain connected to the metal contact layer. As a normally-off switch, it has zero leakage when the gate voltage is below the threshold voltage. If the gate voltage is applied, the channel will open, allowing for a large drain current to flow.

The APT40M42JN has a low on-state resistance, RDS(on), which ensures a low conduction loss at high current, making it attractive for all switch-mode circuits. The APT40M42JN also has an embedded body diode, which helps reduce the forward voltage drop when the switch is turned on. This diode is designed so that the source voltage can withstand a very large reverse voltage without suffering any device damage.

The APT40M42JN has a fast switching speed, which allows the device to switch in and out of the conduction state quickly. This helps reduce the power losses during the switching operation and can increase efficiency in the switching circuit. Furthermore, the APT40M42JN has a very high power density, which makes it well suited for high frequency switching applications.

Conclusion

In conclusion, the APT40M42JN is an excellent choice for a variety of switching applications. It offers a very low RDS(on), fast switching speed and embedded body diode, which makes it attractive for high frequency switching applications. Additionally, the device has a high surge current capability and a very high power density, which makes it suitable for all switch-mode circuits. Overall, the APT40M42JN is an excellent device for any application requiring fast and efficient switching.

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