APT41M80L

Vgs(th) (Max) @ Id:	5V @ 2.5mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264 [L]
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1040W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8070pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	260nC @ 10V
Series:	POWER MOS 8™
Rds On (Max) @ Id, Vgs:	210 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	43A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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APT41M80L Application Field and Working Principle

The APT41M80L is a high voltage, fast-switching N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This kind of MOSFET has special capabilities due to the very large gate-to-source voltage, allowing for both high current and high switching speed.It is designed for use in applications from low voltage to 800V operating voltage. It is ideal for applications where both high-frequency switching and high current capability are needed. Typical applications for such transistors include DC-DC converters, motor control, power management, UPS systems, industrial motor drives, as well as motor control and switch-mode power supplies.The device is made using the latest technology, including deep trench isolation, epitaxial structure, and silicon on insulator technology. This structure serves to decrease its on-resistance while still keeping its switching performance. Its robust structure helps it maintain its performance over its entire operating temperature range.The APT41M80L works by its gate-to-source voltage. When the gate voltage is higher than the source voltage, then the device is "on" and the drain current flows. When the gate voltage is lower than the source voltage, then the device is "off" and the drain current blocks. This enables high speed switching, as the switching time is often much faster than the rise and fall times of other MOSFETs.In addition to its high switching speed and voltage capabilities, the APT41M80L also features low residual voltage, low on-resistance, low gate charge, excellent avalanche energy absorption capabilities, and high power dissipation.Overall, the APT41M80L is a great choice for applications that require both high current switching and high speed switchability. Its gate-to-source voltage capability makes it an ideal choice for many applications. In addition, its robust structure and low on-resistance make it a great option for those looking for a reliable device that can handle even the most demanding applications.

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