Allicdata Part #: | APT48M80B2-ND |
Manufacturer Part#: |
APT48M80B2 |
Price: | $ 14.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 800V 48A T-MAX |
More Detail: | N-Channel 800V 49A (Tc) 1135W (Tc) Through Hole T-... |
DataSheet: | APT48M80B2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 12.78900 |
Series: | POWER MOS 8™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 305nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 9330pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1135W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | T-MAX™ [B2] |
Package / Case: | TO-247-3 Variant |
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APT48M80B2 is an enhancement type high speed power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with higher power efficiency, higher durability, and low turn-on time. It has been used in many industrial and automotive applications, such as motor control and energy conversion systems.
The APT48M80B2 is a single N-channel MOSFET technology that delivers superior performance. It has a high breakdown voltage of 800V, a low on-resistance of 6.8 milliohms at 25°C, a low gate charge of 8.3 nC, and a fast switching speed at 1 nC.
The APT48M80B2 works on a principle known as the Field effect transistor (FET), which is an electrically operated transistor that works by controlling the amount of current moving through a circuit. The FET operates between two distinct modes of operation: enhancement and depletion. In the case of the APT48M80B2, it\'s a N-Channel Enhancement mode MOSFET, meaning that an additional positive electrical charge is required to turn on the device.
In enhancement mode, the gate-source voltage of the FET must be raised above a certain threshold (known as the threshold voltage or turn-on voltage) to “enhance” the transistor. Above the threshold, the conductivity between the source and drain increases, allowing the flow of current. The greater the gate-source voltage, the greater the conductivity and the greater the current flow. Below the turn-on voltage, the gate-source voltage acts as a control gate, and the device acts as an open switch with no current flow.
The APT48M80B2 provides fast switching characteristics and is suitable for applications such as motor control, dc-dc converter, motor drives, and general power supply circuits. Its low gate charge and on resistance contribute to fast switching speed and high current efficiency. Its high breakdown voltage, along with its low on-state resistance, contributes to its superior performance in automotive and industrial applications.
In addition, the APT48M80B2 is known for its high frequency switching, which reduces switching noise, EMI, and other artifacts that can occur with higher frequency switching. This makes it suitable for high speed applications, such as motor control and energy conversion systems.
In summary, the APT48M80B2 is an excellent N-Channel MOSFET that offers superior performance and fast switching speeds in a variety of applications. It has a high breakdown voltage, low on-resistance, low gate charge, and high frequency switching. It can be used in automotive and industrial applications, but due to its high breakdown voltage, it is particularly well-suited for motor control and energy conversion systems.
The specific data is subject to PDF, and the above content is for reference
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