APT45GP120BG Discrete Semiconductor Products |
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Allicdata Part #: | APT45GP120BG-ND |
Manufacturer Part#: |
APT45GP120BG |
Price: | $ 14.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 100A 625W TO247 |
More Detail: | IGBT PT 1200V 100A 625W Through Hole TO-247 [B] |
DataSheet: | APT45GP120BG Datasheet/PDF |
Quantity: | 17 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 13.34340 |
10 +: | $ 12.13190 |
25 +: | $ 11.22180 |
100 +: | $ 10.31190 |
250 +: | $ 9.40198 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Current - Collector Pulsed (Icm): | 170A |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 45A |
Power - Max: | 625W |
Switching Energy: | 900µJ (on), 904µJ (off) |
Input Type: | Standard |
Gate Charge: | 185nC |
Td (on/off) @ 25°C: | 18ns/102ns |
Test Condition: | 600V, 45A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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Introduction
APT45GP120BG is a single, integrated, insulated gate bipolar transistor (IGBT) device used in many industrial and consumer applications. Developed by Ixys Corporation, APT45GP120BG combines an extremely low on-resistance amount, fast switching, and low EMI. It is also believed to provide maximum system stability with minimal effort.
Application Fields
APT45GP120BG can be used for many applications including motor control, consumer applications, power modules, gate drivers and more. It is especially ideal for high frequency applications such as DC-DC controllers, half-bridge converters, and 3-phase inverters. Motor control applications include single phase half wave rectified motor drive systems, adjustable speed drives, and DC motor controls.
Working Principle
The APT45GP120BG IGBT works by controlling the current that passes from the collector to the emitter terminals. When the voltage applied to the gate is below the breakdown voltage of the IGBT, no current flows through the collector-emitter junction and the IGBT is off. When the gate voltage is raised above the breakdown voltage, the current flows through the collector-emitter junction and the IGBT is on. However, the collector-emitter current can be controlled by the gate voltage.
The APT45GP120BG IGBT also offers fast switching between on and off states. The switching time is a combination of the IGBT\'s fall time and the gate drive signal rise time. The shorter the fall time, the faster the switching between on and off. In the on state, the APT45GP120BG offers an extremely low on-resistance, which helps reduce power losses.
Conclusion
The APT45GP120BG IGBT has found application in many industries due to its low on-resistance, fast switching, and low EMI properties. It can be used for a variety of applications ranging from motor control to consumer applications. By controlling the gate voltage applied to the IGBT, the collector-emitter current can be controlled, providing system stability and reduced power losses.
The specific data is subject to PDF, and the above content is for reference
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