| Allicdata Part #: | APT40GR120S-ND |
| Manufacturer Part#: |
APT40GR120S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 1200V 88A 500W D3PAK |
| More Detail: | IGBT NPT 1200V 88A 500W Surface Mount D3Pak |
| DataSheet: | APT40GR120S Datasheet/PDF |
| Quantity: | 26 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Power - Max: | 500W |
| Supplier Device Package: | D3Pak |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 40A, 4.3 Ohm, 15V |
| Td (on/off) @ 25°C: | 22ns/163ns |
| Gate Charge: | 210nC |
| Input Type: | Standard |
| Switching Energy: | 1.38mJ (on), 906µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 40A |
| Current - Collector Pulsed (Icm): | 160A |
| Current - Collector (Ic) (Max): | 88A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | NPT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The APT40GR120S is an insulated-gate bipolar transistor (IGBT) module designed and manufactured by ABB. It is an advanced form of semiconductor device capable of switching high levels of power with very low loss and high efficiency. The APT40GR120S is designed with a revolutionary technology to enable high switching speeds, like a transistor or a diode, but without the need for separate insulation or base current. Instead, it utilizes a dielectric-insulated base structure for the highest levels of isolation.
In particular, the APT40GR120S IGBT module is intended for use in high-voltage applications where an ultra-high-speed switching device is required. It is capable of operating up to 7200V and 1200A, and can switch with incredible speeds of up to 50kHz. It is well-suited for commercial and industrial applications such as motor drives, UPS, renewable energy inverters, HVAC, and servo applications.
The APT40GR120S utilizes a dielectric-insulated base structure for the highest levels of isolation, minimizing the risk of electrical arcing during operation. Additionally, it features a unique package design with a pair of semiconductor chips connected in series and encapsulated with a silicone encapsulant. This design helps minimize the internal cross-talk and reduce the noise of the IGBT module during operation.
The APT40GR120S is also designed with a snubberless circuit design, allowing users to achieve maximum efficiency levels since there’s no need for an external snubber circuit. It utilizes a voltage-controlled high-frequency electrical source to gate the IGBTs, allowing high switching speeds and a low switching loss. The low switching loss leads to improvements in power efficiency which is extremely important in energy-saving applications such as motor and UPS systems.
The APT40GR120S has a typical rise time of 20ns at full operating voltage and currents. This rise time is faster and more reliable than mechanical relays, allowing for improved responsiveness and better operation in demanding applications. Additionally, the package includes an internal temperature sensing circuit for improved thermal management. This temperature sensing circuit provides accurate temperature readings during high-power operation.
Overall, the APT40GR120S is an ideal choice for high-power applications because of its high-speed switching, low switching loss, and integrated thermal sensing. It is easy to install and is well-suited for many applications such as motor drives, UPS, renewable energy inverters, HVAC, and servo applications. With its dielectric-insulated base structure and snubberless circuit design, the APT40GR120S IGBT module provides reliable operation with minimal noise and maximum efficiency.
The specific data is subject to PDF, and the above content is for reference
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APT40GR120S Datasheet/PDF