Allicdata Part #: | APT54GA60B-ND |
Manufacturer Part#: |
APT54GA60B |
Price: | $ 4.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 96A 416W TO-247 |
More Detail: | IGBT PT 600V 96A 416W Through Hole TO-247 [B] |
DataSheet: | APT54GA60B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
90 +: | $ 4.17725 |
Power - Max: | 416W |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 32A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/112ns |
Gate Charge: | 158nC |
Input Type: | Standard |
Switching Energy: | 534µJ (on), 466µJ (off) |
Series: | POWER MOS 8™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 32A |
Current - Collector Pulsed (Icm): | 161A |
Current - Collector (Ic) (Max): | 96A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Transistors, traditionally known for its ability to amplify a signal, have become a driving force behind a multitude of modern applications. From microprocessors governing start/stop functions in automobiles to switch-mode power supplies that regulate the supply of electrical currents and digital display panels, transistors are widely used in virtually every area of electronics. IGBTs (Insulated Gate Bipolar Transistors) are a commonly used type of transistor in these applications and the APT54GA60B is a single IGBT that is used across multiple industries. This paper will analyze the application field and working principles of the APT54GA60B. The APT54GA60B is an isolated single IGBT transistor that operates in either a forward blocked or reverse conducting mode at frequencies up to 1 MHz. Typical applications include motor controls and inverters. This device has some significant advantages when compared with other types of transistors, particularly those with (MOSFETs) metal-oxide semiconductor field-effect transistors. First and foremost, IGBT transistors are notable for their extremely low on-resistance, which ensures minimal power is lost when switching between on and off states—resulting in increased efficiency. Secondly, IGBTs have a high integration density, meaning they are capable of performing multiple functions within a single package. Therefore, the APT54GA60B is characterized by its small size, light weight, and reduced power dissipation. In terms of the operational principles of the APT54GA60B, it consists of four main components: an insulated gate, power source, collector, and emitter. When the insulated gate is not connected to a power source, there is no current flowing through the transistor. When a voltage is applied to the gate, electrons are attracted to the gate and current will flow through the device. This causes a voltage to be created between the power source and the collector, which results in the transistor switching to the on state. The APT54GA60B is compatible with the majority of power sources, including AC and DC sources, and it can operate at temperatures up to 150°C. Furthermore, the device has an inherent high level of insulation, reducing the risk of electrical shock and ensuring that components powered with the APT54GA60B, including motors, will have a long life expectancy. In summary, the APT54GA60B is a single IGBT transistor that features a low on-resistance, integration density and high temperature rating. This device is suitable for motor control, inverter and switch mode applications, and it is designed to reliably and efficiently manage the current needed for these types of applications. As such, the APT54GA60B is a highly capable device that has proved its worth in a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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