Allicdata Part #: | APT5018BLLG-ND |
Manufacturer Part#: |
APT5018BLLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 27A TO-247 |
More Detail: | N-Channel 500V 27A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | APT5018BLLG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2596pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The APT5018BLLG is a versatile and efficient element that can be used in a wide range of applications. This product is a single N-Channel MOSFET, with logic level functionality. It enables the easy design of power switching circuits, with a wide range of benefits. In this article, we will discuss the many application fields of the APT5018BLLG, as well as its working principle.
The APT5018BLLG is well-suited to switching applications of up to 5 A and 50 V. Its impressive gains and low tolerance range make it an attractive option for controlling high power devices. Additionally, the APT5018BLLG’s logic level compatibility allows it to be used in logic circuits, and its low RDS on-resistance provides excellent thermal properties.
Since the APT5018BLLG is a single N-Channel MOSFET, its use in the design of power switching circuits naturally follows. As a result, the APT5018BLLG is often used in DC/DC converters, motor and other inductive applications, as well as in distributed power systems such as servers. In all of these applications, the high performance of the device makes for an efficient and reliable design that offers superior results.
The high performance of the APT5018BLLG comes from its unique design. The MOSFET uses a charge balance technique to reduce the leakage current, which provides improved reliability and performance. Additionally, the device uses a high speed logic level technology, which allows the APT5018BLLG to switch quickly and efficiently between its logic levels. This helps to reduce power consumption, while also providing better control of the device.
The working principle of the APT5018BLLG is also a fundamental part of its design. The device features an N-Channel MOSFET that operates in depletion mode. The MOSFET is connected in series with a low-side switch. When the gate voltage is above the turn-on voltage, the MOSFET is turned on and current is able to flow through the MOSFET. When the gate voltage is below the turn-off voltage, the MOSFET is turned off and the current will not be able to flow.
The MOSFET also has two temperature protection features that help to prevent overheating. The first is the thermal protection circuit, which limits the temperature of the device to a safe level. The second is the power limiting circuit, which places a restriction on the amount of power that can be used to limit the current level. Both of these features are important for the reliability and performance of the device, as they help to ensure that the MOSFET is used properly and will not affect the performance of the circuit.
The APT5018BLLG is a versatile and reliable element that can be used in a wide range of applications. Its performance, design, and working principle make it a great option for controlling high power elements, as well as for more complex power switching applications. As a result, the APT5018BLLG has become a popular choice among designers and engineers in the field.
The specific data is subject to PDF, and the above content is for reference
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