Allicdata Part #: | APT5010LLLG-ND |
Manufacturer Part#: |
APT5010LLLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 46A TO-264 |
More Detail: | N-Channel 500V 46A (Tc) 520W (Tc) Through Hole TO-... |
DataSheet: | APT5010LLLG Datasheet/PDF |
Quantity: | 60 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4360pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT5010LLLG is a new development in the field of transistors; more specifically, FETs and MOSFETs, into the range of ‘Single’. It is the latest in technology advances developed specifically to provide better performance and improved power efficiency.
A FET, or Field Effect Transistor, is a type of transistor that works by controlling the amount of current that flows between two electrodes, or gates, using a semiconductor material as insulation. This medium is then modulated using an input signal, allowing the device to control the output current by controlling the medium. The semiconductor material acts as an insulation layer, preventing current from leaking out of the device and to prevent harmful electrical noise from getting into the device.
MOSFETs or Metal-Oxide Semiconductor FETs are transistors that use the principle of field effect, but take it one step further by controlling the amount of current that flows between two electrodes by facilitating the movement of charge ‘carriers’ as opposed to current. This results in far greater current and voltage control over the device.
The APT5010LLLG builds upon the existing technology of both FETs and MOSFETs, allowing control over both input and output currents, whilst providing better performance and improved power efficiency. This is achieved through the use of the latest semiconductor materials and applying larger gate dimensions, further reducing gate leakage and increasing current capacity.
The APT5010LLLG offers a wide range of applications in the electronics field. It is ideal for power management applications such as battery chargers, and can also be used in logic level circuits due to its improved performance capabilities and high speed switching. It is also particularly useful for applications where power efficiency is increasingly important, such as automobile systems, digital displays and other devices.
Due to its excellent power efficiency, the APT5010LLLG is one of the most popular devices for use in high frequency switching applications. This is because the power efficiency of the device is greatly improved over conventional devices, and as such is desirable for use in laptops and other mobile devices.
In addition to its improved power efficiency, the APT5010LLLG also offers improved thermal characteristics, meaning it can operate at much higher temperatures without risking the failure of the device. This is further compounded by the large gate area which provides better cooling capabilities, allowing it to handle higher current and switch faster than conventional devices.
Overall, the APT5010LLLG is an excellent device for a wide range of applications, offering improved power efficiency and thermal characteristics. With its superior performance characteristics, it is an ideal choice for those wishing to reduce system power requirements and improve the performance of their applications.
The specific data is subject to PDF, and the above content is for reference
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