APT58M50JU2

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APT58M50JU2 is a n-channel enhancement mode (normally-off) field-effect power transistor manufactured by Advanced Power Technology. It contains one vertical DMOS power transistor. With a threshold voltage of 2.5V and a package of PowerDI 50, it is ideal for use in battery-operated systems such as personal digital assistant (PDA), portable media players, mobile phones, and digital cameras.

The APT58M50JU2 device is a combination of vertical DMOS power field-effect transistor (FET). It is composed of insulated-gate field-effect transistors (IGFETs) that consist of an insulated-gate electrode called the gate and two ohmic contacts called source and drain. These elements are connected in series to provide an enhancement mode transistor.

The device operates by transferring majority carriers (electrons) from the drain to the source through the n-channel region. When the voltage applied to the gate is higher than the threshold voltage (2.5V), an inversion layer forms in the n-channel and the device turns on. This inversion layer provides a path for the electrons to move from the drain to the source and a current therefore flows from the drain to the source.

The device can be connected as an enhancement-mode transistor in a wide range of power MOSFET (metal-oxide semiconductor field-effect transistor) applications. It is suitable for a variety of applications including switching, motor control, DC-DC conversion, and power management. Furthermore, it can be used in battery-operated systems where it provides low RDS(on) values, low static and dynamic current continuations, and close to zero gate drive power requirements.

The APT58M50JU2 device is designed to provide excellent performance in a variety of power MOSFET applications. Its insulated-gate field-effect transistor structure provides exceptionally low on-resistance and fast switching. Furthermore, its low gate threshold voltage allows for low power operation, making it ideal for use in battery-operated systems. Additionally, the device offers protection against electrostatic discharge (ESD) up to 8kV.

In sum, the APT58M50JU2 is a reliable and efficient n-channel enhancement mode power FET which is suitable for a variety of power MOSFET applications. It offers excellent performance and low power consumption, making it ideal for battery-operated systems such as PDAs, portable media players, mobile phones, and digital cameras.

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