APT5014SLLG/TR Allicdata Electronics
Allicdata Part #:

APT5014SLLG/TR-ND

Manufacturer Part#:

APT5014SLLG/TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 35A TO-247
More Detail: N-Channel 500V 35A (Tc) 403W (Tc) Through Hole TO-...
DataSheet: APT5014SLLG/TR datasheetAPT5014SLLG/TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 403W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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APT5014SLLG/TR is a single N-channel enhancement mode MOSFET which is fabricated using a CMOS process. It is designed for low noise audio and video amplifier applications. The device has an integrated gate protection resistor which prevents any overshoot or undershoot of the gate voltage, ensuring a smooth operating waveform.

The device is rated to sustain a drain-source breakdown voltage of 45V and also comes with a high current rating of 8A. It has an on-state resistance of 0.006Ω and can handle peak currents up to 35A. The device is offered in the TO-220 package, making it suitable for use in tight spaces.

It is recommended to use the device with a minimum gate source voltage of 5V in order to ensure properly functioning. It is also necessary to ensure that the total gate charge does not exceed 10nC to prevent gate-induced drain leakage. The thermal resistance of the device is 31°C/W, meaning that it can dissipate up to 2.6W of power in a 25°C ambient temperature environment.

APT5014SLLG/TR MOSFET is mainly used in low noise audio and video amplifier applications. The low on-state resistance of the device makes it ideal for use in low loss applications. The device is also suitable for high speed switching applications and can be used for high frequency applications due to its good switching characteristics. The integrated gate protection resistor makes the device resistant to ESD as well.

The working principle of APT5014SLLG/TR MOSFET is based on the basic principles of field effect transistors. The principle is that, when a voltage is applied between the gate and the source, it creates an electric field across the gate oxide. This electric field modulates the conductivity of the channel, thereby allowing current to flow between the source and the drain.

The gate voltage, along with the drain-source voltage, determines the amount of current that can flow through the device. When the gate voltage is higher than the drain-source voltage, the device is in an "on" state, meaning that current will flow through the device. When the gate voltage is lower than the drain-source voltage, then the device is in an "off" state, meaning that no current will flow through the device.

Thus, APT5014SLLG/TR MOSFET can be used for controlling current in low noise audio and video amplifier applications. It can also be used for high speed switching applications and high frequency applications due to its low on-state resistance, low capacitances and good switching characteristics. Thanks to the integrated gate protection resistor, the device also provides protection against ESD.

The specific data is subject to PDF, and the above content is for reference

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