APT50GN60BDQ2G Discrete Semiconductor Products |
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Allicdata Part #: | APT50GN60BDQ2G-ND |
Manufacturer Part#: |
APT50GN60BDQ2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 107A 366W TO247 |
More Detail: | IGBT Trench Field Stop 600V 107A 366W Through Hole... |
DataSheet: | APT50GN60BDQ2G Datasheet/PDF |
Quantity: | 113 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 107A |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 1.85V @ 15V, 50A |
Power - Max: | 366W |
Switching Energy: | 1185µJ (on), 1565µJ (off) |
Input Type: | Standard |
Gate Charge: | 325nC |
Td (on/off) @ 25°C: | 20ns/230ns |
Test Condition: | 400V, 50A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device which combines the characteristics of a MOSFET and a BJT. These devices are widely used in various applications in both mid-high power applications and low-voltage applications. The APT50GN60BDQ2G is a single IGBT device manufactured by APT Advanced Power Technology, Inc. It is designed for high-efficiency applications and is ideal for use in home appliances, medical devices, and telecom/data equipment, among other applications.
The APT50GN60BDQ2G is a 600V IGBT module which is a three-terminal device consisting of an IGBT chip and a fast recovery diode (FRD). It has a current gain of 1,500 A/V and a forward voltage drop of 2.2 V. The IGBT features a nominal turn-on and turn-off delay time of 15 µs and 20 µs respectively, which ensures fast switching speeds and helps maximize efficiency. The device has 2 ohms/1 ohm source/emitter on-state resistance and provides high-speed recovering reverse energy for improved reliability.
Working principle: The APT50GN60BDQ2G IGBT is operated in the same manner as any other transistor. When a current passes through the gate of the IGBT, a voltage is induced across the base-emitter junction, activating the transistor. This current then flows through the IGBT\'s collector-emitter junction, producing a constant and controlled current gain, allowing the IGBT to switch on and off with high efficiency and low energy losses.
Applications: APT50GN60BDQ2G IGBTs are typically used in home appliances and automated systems. The device is highly suitable for power supplies and various types of converters, including AC-DC, DC-DC, AC-AC, and DC-AC. They can also be used in motor drives, frequency transformers, and power factor controllers. This device\'s low forward voltage drop and fast switching times make it ideal for high-efficiency applications such as power supplies, motor drives and frequency transformers.
Due to its high current gain and low forward voltage drop, the APT50GN60BDQ2G IGBT is ideal for high-efficiency applications. It is also highly suitable for use in home appliances, medical devices, and telecom/data equipment. Additionally, the device\'s integrated fast recovery diode provides improved reliability and helps to reduce energy losses.
The specific data is subject to PDF, and the above content is for reference
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