APT50GN120B2G

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Single IGBTs are the most commonly used transistors available in the industry and are usually used in applications that require high voltage and power control. The APT50GN120B2G is a single insulated-gate bipolar transistor (IGBT) device capable of delivering high-speed switching, large current and low on-state resistance. This IGBT features low power losses and high system efficiency. It has a low gate turn-on voltage and a high peak off-state voltage blocking capability and is capable of providing fast switching operation.

Apart from this, the APT50GN120B2G IGBT provides a low noise operation and a wide range of operating temperature for reliable operation. This IGBT is typically used in power converters, UPS systems, switch-mode power supplies, and traction systems. It is also found in renewable energy systems, Welding equipment and medium to high power Induction Heating systems. Furthermore, it is used where high frequency operation and fast response times are required.

The APT50GN120B2G device includes a high frequency insulated-gate structure. It is composed of a N-channel enhancement mode MOSFET and a reverse conduction PNPN diode. The MOSFET is the active element of the device and the diode is connected in antiparallel to the MOSFET. This diode serves as the output path when the transistor is in reverse blocking mode.

The APT50GN120B2G IGBT provides a maximum rated current of 50A (IC–CONT). Its collector-emitter voltage rating is 1200V and its collector-emitter saturation voltage is 2V. It also has a gate turn-on voltage of 4.5V and a gate-emitter voltage rating of ±20V. In addition, this IGBT has a current gain of 45A/V and a thermal resistance rating of 80°C/W.

This IGBT device is designed to operate most efficiently at high frequencies. Its typical turn-on time is 1 µsec and its typical turn-off time is 7 µsec. The device has a peak repetitive reverse voltage of 1.2 kV and its maximum junction temperature rating is 175°C. Additionally, it has an efficient clamp circuitry to protect the device from gate fusing.

The APT50GN120B2G is mainly used in high power applications such as renewable energy systems, Welding equipment and medium to high power Induction Heating systems. This IGBT device has a high-frequency insulated-gate structure which enables it to operate efficiently and quickly. It has a low on-state resistance for high power operation and low power losses for improved system efficiency. Additionally, its low gate turn-on voltage and high peak off-state blocking capability ensures safe and reliable operation.

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