Allicdata Part #: | APT5SM170S-ND |
Manufacturer Part#: |
APT5SM170S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 700V D3PAK |
More Detail: | N-Channel 1700V 4.6A (Tc) 52W (Tc) Surface Mount D... |
DataSheet: | APT5SM170S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.2V @ 500µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 1000V |
Vgs (Max): | +25V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
Drain to Source Voltage (Vdss): | 1700V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APT5SM170S is a type of single FET (field effect transistor).FETs have an advantage over other transistors because of their low-current characteristics and relatively high gain. There is no gate current with FETs, which makes them more suitable for low-noise applications. In addition, FETs can also be used for switching applications.
The APT5SM170S is a N-channel enhancement mode FET. The maximum drain to source voltage (VDS) is 170 volts and the maximum drain current is 5 amps. The device has a package size of SM2-L9 (TO-220). The maximum junction temperature is 150 °C. It is also available in a surface-mount package (SMD-L9, TO-263) option.
The FET is used in DC circuits and other applications with voltage and current levels of up to 170V and 5A respectively. It is well suited for high-side or low-side switching of loads. The switching speed is also quite fast due to its low gate charge. This makes it suitable for applications such as relay circuits, power supplies, and other switching-type electronic applications.
In terms of its working principle, a FET is a three-terminal device that can be used as an amplifier, switch, or for controlling current flow. Like other transistors, the FET is composed of a P-type semiconductor channel between two metal-oxide-semiconductor field-effect transistor (MOSFET) terminals. The two terminals are called the source and the drain. The third terminal is the gate. When a voltage is applied to the gate, an electric field is created at the P-type material. This electric field attracts conduction electrons within the P-type material and creates a current flow between the source and the drain.
The APT5SM170S can be used in a variety of applications due to its high current and low on-resistance capabilities, as well as its fast switching capabilities. It is suitable for audio power, automotive, and telecom systems, as well as DC/DC converters and power supplies. It can also be used for synchronous rectification, load-switching, and motor control, among other applications.
In conclusion, the APT5SM170S is an N-channel FET with a maximum drain to source voltage of 170 volts and a package size of SM2-L9 (TO-220). It can be used for a wide range of applications due to its high-current and low on-resistance characteristics as well as its fast switching capability. Its working principle involves the use of a P-type channel between two terminals, with a voltage applied to the third gate terminal to create an electric field and attract conduction electrons. It can be used for audio power, automotive, and telecom systems, DC/DC converters, power supplies, and motor control, among other applications.
The specific data is subject to PDF, and the above content is for reference
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