Allicdata Part #: | APT60DQ100LCTG-ND |
Manufacturer Part#: |
APT60DQ100LCTG |
Price: | $ 4.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ARRAY GP 1000V 60A TO264 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 1000V 6... |
DataSheet: | APT60DQ100LCTG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.98191 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io) (per Diode): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 255ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1000V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
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The APT60DQ100LCTG is a fast and ultra-low VF/ESCR (MELF) Schottky rectifier diode array, manufactured by Advanced Power Technology (APT). This diode array is ideally suited for a variety of applications due to its dual rectifier configuration, small size, and fast switching speed. The device is available in three package sizes and has two separate diode arrays. Each diode has a reverse voltage of 60V and a forward current of 1.0A.
Application Fields
The APT60DQ100LCTG is designed for applications requiring very low forward voltage drop and low reverse current leakage. This makes it ideal for low-power designs, low-noise circuits, and transceivers. It is also suitable for automotive and industrial applications where a fast switching diode is required, such as battery charging and power line-frequency rectification. The device can be used in switch mode power supplies, high speed switching circuits, and secondary voltage clamps.
Working Principle
The APT60DQ100LCTG is an Ultralow VF/ESCR (MELF) Schottky rectifier diode array. It consists of two separate series parallel diode arrays. The device is constructed using a very thin silicon layer to create an ultra-low forward voltage drop. Each diode in the array has a maximum forward voltage drop of 0.1V and a reverse voltage of 60V. When operated, each individual diode in the array switches very rapidly, resulting in a fast switching speed. The low reverse leakage and low forward-voltage drop improves the circuit efficiency and reduces power consumption.
The APT60DQ100LCTG is suitable for a variety of applications due to its low VF/ESCR, fast switching capability, and small size. Its fast switching speed and low forward voltage drop make it an ideal choice for automotive and industrial applications. The device is available in three package sizes, making it suitable for an array of design configurations.
The specific data is subject to PDF, and the above content is for reference
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