| Allicdata Part #: | APTGT300DA170G-ND |
| Manufacturer Part#: |
APTGT300DA170G |
| Price: | $ 80.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 1700V 400A 1660W SP6 |
| More Detail: | IGBT Module Trench Field Stop Single 1700V 400A 16... |
| DataSheet: | APTGT300DA170G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 73.24450 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| Current - Collector (Ic) (Max): | 400A |
| Power - Max: | 1660W |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 300A |
| Current - Collector Cutoff (Max): | 750µA |
| Input Capacitance (Cies) @ Vce: | 26.5nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP6 |
| Supplier Device Package: | SP6 |
Description
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Transistors - IGBTs - Modules: APTGT300DA170G
APTGT300DA170G is an IGBT module made by Infineon Technologies. It is mainly used in applications such as soft starters and DC choppers, as well as in adjustable speed drives and frequency converters.An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the best features of a MOSFET and a bipolar transistor. The positive features of each are used in an IGBT, making it an excellent choice for demanding power applications. This module is characterized by its high voltage and power ratings, fast switching features, and excellent performance across a wide range of temperatures and conditions.The APTGT300DA170G is a three-phase, three-level, full controllable IGBT module. It consists of a module base plate, six IGBTs, and two speed diodes. The module has one common emitter, as well as three dedicated emitter terminals, one for each of the three levels. The three levels also feature an insulated gate, which is used to vary the voltage applied to the gate to control the module. The IGBTs are rated at a maximum drain (collector) to source (emitter) voltage of 1700V, and the overall module is rated up to 300A. The module also has a variety of protection features, including over-temperature protection, short-circuit protection, and over-current protection.The working principle of the APTGT300DA170G is based on the principle of using an insulated gate to control and turn on and off the IGBT. When the gate is open, the IGBT allows current to flow, and when the gate is closed, the flow of current stops. The gate voltage controls the on/off status of the IGBT, and the higher the gate voltage, the higher the conduction of the IGBT. The module also has a current limiting feature, which helps protect the module and other components from damage due to excessive current.CFM provides a wide range of solutions for applications relying on the APTGT300DA170G module. Their solutions range from single IGBT modules to complete power systems, and they ensure reliable operation, even in high-temperature and harsh industrial environments. CFM also provides a range of custom solutions with high power semiconductor modules consisting of IGBT stacks. These custom solutions provide higher efficiency and better performance in demanding applications.The APTGT300DA170G module is a reliable and efficient solution for many demanding power applications. Its high voltage and power ratings, fast switching features, and excellent performance across a wide range of temperatures and conditions make it an ideal choice for applications that require high power with reliable operation. With CFM\'s wide range of solutions and customizations, it is clear to see why the APTGT300DA170G module from Infineon Technologies is the optimal choice for many power systems.The specific data is subject to PDF, and the above content is for reference
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APTGT300DA170G Datasheet/PDF