APTGF180H60G

The APTGF180H60G is a module consisting of four IGBTs that are essential components of power-electronic switching systems. By acting as a voltage switch, these IGBTs enable high current and high voltage applications. The APTGF180H60G offers a range of features and benefits, including a high power density and low power losses. It also features a wide variety of packages and sizes, allowing it to be used in a variety of applications.

Application Field of APTGF180H60G

APTGF180H60G modules are typically used in applications that require a high current switching system and/or a fast switching speed. Examples include motor drives, high power industrial applications, solar power generation systems, and.ground and air transportation.

APTGF180H60G modules are also used in applications where minimum power losses are important for electrical efficiency, such as medium and high voltage inverter applications, UPS systems, and active harmonic filtering systems.

Working Principle

An IGBT is an insulated gate bipolar transistor, which is a type of semiconductor switch. This switch is made up of two components: an insulated gate and a transistor. The insulated gate is made up of a voltage source and a metal oxide semiconductor field effect transistor (MOSFET) that are connected internally. When the voltage source is connected to the gate terminal of the MOSFET, it creates a gate charge. When this gate charge reaches a certain level, the MOSFET switches from an off-state to an on-state.

The transistor part of the IGBT is made up of two p-n junctions that are connected in reverse direction. When a voltage is applied to the transistor, current will flow from the collector to the emitter. When the gate voltage is insufficient to allow for current flow, the IGBT is said to be in the cut-off state. When the gate voltage is sufficient to allow for current flow, the IGBT is said to be in the saturation state.

The APTGF180H60G module is a combination of four IGBTs that are individually connected in series by their common emitter and collector. The combination of the four IGBTs allows the APTGF180H60G module to handle large currents at high voltages and to switch quickly. The APTGF180H60G module is designed to provide circuit designers with a high power density, low power loss, and fast switching speed.