APTGF180DH60G

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	220A
Power - Max:	833W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 180A
Current - Collector Cutoff (Max):	300µA
Input Capacitance (Cies) @ Vce:	8.6nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6

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.Transistors - IGBTs - Modules
The APTGF180DH60G is an insulated gate bipolar transistor (IGBT) module for use in power transmission applications. This device is a superbly designed and robust module with high power switching capabilities that make it successful in a wide variety of machine design applications. It uses advanced power transistor technology to offer superior current handling capability and low on-state voltage at a low cost. In addition, the module is able to tolerate high temperature operations and features advanced insulation technology to reduce EMI/EMC issues.The working principle of the APTGF180DH60G is fairly simple. When voltage is applied to the gate, it creates a strong magnetic field between the base and the collector terminals. This field then polarizes the junction between the collector and the emitter. As a result, current is created between the collector and emitter, causing the transistor to become activated. This enables the module to produce high efficiency and reliable power delivery.The module is mainly used in automotive and industrial applications as it offers better current handling and lower power loss. It is also used in HV electrical systems such as Electric Vehicles (EVs), Electric Bikes (EBs) and Hybrid Electric Vehicles (HEV). The device has a very low on-state voltage, making it a good choice for automotive applications such as Electronic Control Units (ECUs). In addition, the device has a low thermal resistance, allowing for efficient heat management.The APTGF180DH60G is mainly suitable for use in DC power transmission applications, as it provides fast switching and low impedance. As it is designed for use in high temperatures, it also offers low thermal resistance, meaning it can dissipate heat efficiently. It is also capable of handling high switching frequencies, making it suitable for high-speed perimeter protection applications. In addition, the package size is compact and lightweight, making it suitable for a wide range of applications such as circuit protection, rectifier and inverter designs. Its robust construction and low cost makes it a great choice for most cost-sensitive applications. Overall, the APTGF180DH60G is a feature-rich insulated gate bipolar transistor (IGBT) module that offers superior current handling capability and low on-state voltage at a low cost. It is well-suited for power transmission applications, such as DC power transmission, rectifier and inverter designs, circuit protection and high-speed perimeter protection. The module can tolerate high temperatures and features advanced insulation technology to reduce EMI/EMC issues. In addition, it is lightweight and compact, making it suitable for a variety of applications.

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