Allicdata Part #: | APTGT300DA120G-ND |
Manufacturer Part#: |
APTGT300DA120G |
Price: | $ 65.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT PHASE BOOST CHOP 1200V SP6 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 420A 13... |
DataSheet: | APTGT300DA120G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 59.50250 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 420A |
Power - Max: | 1380W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 300A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 21nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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The APTGT300DA120G is an insulated gate bipolar transistor (IGBT) module. It has a 1200V power rating and a maximum collector current of 300A. This makes it suited for applications such as motor control, lighting control, servo drive, uninterruptible power supplies, traction, and automotive.
The APTGT300DA120G features a fast switching speed, low on-state voltage drop, low gate control current, short-circuit protection, and over-temperature protection. This module’s power dissipation capabilities are rated up to 360W and it is designed to operate within a temperature range of -40°C to 125°C.
The module is produced using tandem die technology and connected in a diode-diode configuration. This enables it to handle high voltages and arc suppress, making the APTGT300DA120G a great choice for applications that require fast switching, low conduction losses and high reliability.
The working principle of the APTGT300DA120G is based on the behavior of a transistor. IGBTs are formed by combining two transistor elements: a bipolar junction transistor (BJT) and a field-effect transistor (FET). The BJT acts as the output transistor and is insulated from the FET, which acts as the input transistor. This combination allows the IGBT to function as a switch and amplify the incoming signal.
When the input voltage is applied to the FET, the gate-emitter voltage begins to rise. This voltage increase attracts the electrons from the base of the BJT, increasing the current across the two transistor elements. This current increase strengthens the junction field, ensuring that the IGBT remains in its on-state. When the current reduces, the IGBT enters its off-state.
The APTGT300DA120G is well suited to applications that need to switch high currents and voltages without generating arcing or sparking. It is an economical solution for switching a variety of voltages and currents, making it suitable for a wide range of applications including motor control, lighting control, uninterruptible power supplies, servo drive, traction, and automotive.
The specific data is subject to PDF, and the above content is for reference
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