Allicdata Part #: | APTGT50DH60TG-ND |
Manufacturer Part#: |
APTGT50DH60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MOD TRENCH ASYM BRIDGE SP4 |
More Detail: | IGBT Module Trench Field Stop Asymmetrical Bridge ... |
DataSheet: | APTGT50DH60TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench Field Stop |
Configuration: | Asymmetrical Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Power - Max: | 176W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 50A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 3.15nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTGT50DH60TG Application Field and Working Principle
APTGT50DH60TG is an insulated gate bipolar transistor (IGBT) module. It is used as a power switching device when controlling various electrical circuits. Therefore, it belongs to the category of electrical components known as Transistors, specifically to the IGBTs, Modules subcategory.
The APTGT50DH60TG module is a three-phase module, which can operate with a wide range of DC voltage from 200 V to 600 V, and it is able to control currents of up to 50A. Because of its small size (115 x 65 x 21.5 mm) and its reduced weight, it is ideal for applications in which space and weight are limited. This module is mainly used in inverters, variable frequency drives, traction applications, alternating current uninterruptible power systems, motor control applications, and many more.
In order to understand its working principle, let’s start by explaining briefly about IGBTs. It is a type of switching transistor with the properties of both a BJT (bipolar junction transistor) and MOSFET (metal-oxide-semiconductor field-effect transistor). Its properties are similar to an MOSFET, as it has three basic terminals, Drain, Gate and Source, however, its structure is closer to a BJT.
The Gate terminal of the IGBT works as a normal transistor gate, as it can block current in the circuit by not allowing carriers to pass between the Drain and Source terminals, following this mode of operation. By applying a voltage at the Gate terminal, carriers can pass between the Drain and Source terminals; hence, they can control current in a circuit.
The APTGT50DH60TG module mainly consists of two IGBTs and two FreeWheel diodes. The two IGBTs on the module feature a positive temperature coefficient (PTC) of the gate threshold voltage, which ensures a high switching frequency. The two FreeWheel diodes connected to the IGBTs can help in the case of large surge currents - they provide a safe escape route for them, before they reach the IGBT.
The PTC of the IGBT on the APTGT50DH60TG module is very useful for applications such as in the case of traction that require higher switching frequencies. Additionally, the IGBTs have low on-state voltage losses, as well as a low reverse recovery time for the diodes, making the APTGT50DH60TG module a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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