
Allicdata Part #: | APTGV75H60T3G-ND |
Manufacturer Part#: |
APTGV75H60T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT NPT BST CHOP FULL BRDG SP3 |
More Detail: | IGBT Module NPT, Trench Field Stop Full Bridge Inv... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT, Trench Field Stop |
Configuration: | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 4.62nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
Description
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<p class="MsoNormal">The APTGV75H60T3G is an insulated gate bipolar transistor switch module (IGBT) manufactured by Fuji Electric. This device is an IGBT module with three phase bridge structures. It is designed for high frequency switching operations in industrial applications such as motor drives, frequency converters, UPS systems and induction heaters. This module is designed for use in applications that require high switching speed, high current capabilities and high reliability.</p> <p class="MsoNormal">The APTGV75H60T3G is built with a stable high-speed thyristor optimized for high power applications. It features high-speed switching capabilities with a turn-on delay of 0.87μs and a turn-off delay of 0.41μs. The device has an operating voltage range of 600-4000V and offers excellent surge resistance up to 10,000A. It is rated for a maximum output current of 75A and is capable of providing a maximum switching power of up to 5,000kW.</p><p class="MsoNormal">The APTGV75H60T3G is based on a reverse conducting IGBT chip, which consists of an insulated gate, an emitter and a collector. The insulated gate is designed to control the switching operation. The collector and emitter are designed to provide the current flow path for the switching operation.</p> <p class="MsoNormal">When a proper gate voltage is applied, the insulated gate transistor becomes forward biased. This causes the electrons to be attracted to the emitter and results in a low on-state resistance. The electrons then flow through the emitter and collector, resulting in the forward conduction of current.</p> <p class="MsoNormal">When the gate voltage is removed, the electrons in the emitter are no longer attracted and the device switches off. This results in an instant switch off and no current flowing through the collector and emitter.</p> <p class="MsoNormal">The APTGV75H60T3G is designed for a wide variety of industrial applications that require fast switching, high current capabilities and high reliability. It can be used in motor drives, frequency converters, UPS systems and induction heaters. The module is ideal for applications that require the continuous switching of currents of up to 75A and can handle up to 10,000A of surge current.</p> <p class="MsoNormal">The APTGV75H60T3G is an ideal solution for applications that require high reliability and efficient control capabilities. It is designed to provide high-speed switching, excellent surge resistance and maximum output current of up to 75A. The module is suitable for a wide range of applications due to its high switching speed, high current capabilities and high reliability.</p>The specific data is subject to PDF, and the above content is for reference
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