Allicdata Part #: | APTGT30DA170D1G-ND |
Manufacturer Part#: |
APTGT30DA170D1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1700V 45A 210W D1 |
More Detail: | IGBT Module Trench Field Stop Single 1700V 45A 210... |
DataSheet: | APTGT30DA170D1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 45A |
Power - Max: | 210W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 30A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 2.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | D1 |
Supplier Device Package: | D1 |
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The APTGT30DA170D1G is a module incorporating a IGBT power transistor, suitable for utilisation in power-electronics applications. The module consists of one insulated gate bipolar transistor (IGBT) housed in an industry-standard package. The module has a high-speed full complementary N-channel structure, with a maximum holding current of 180 A, making it suitable for use in a wide range of different precision applications.
Application Field
The APTGT30DA170D1G module is optimized for applications in power electronics. Its maximum breakdown voltage of 1700 V means that it is suitable for a wide range of different voltage requirements, although it is particularly recommended for medium and low voltage systems. In addition, its current capacity of up to 180 A means that it has the ability to provide sufficient power to support medium to high power applications. The package is of the industry-standard type, so the module is easy to install and integrate into existing systems.
Working Principle
The APTGT30DA170D1G module works on the basic premise of current control. Its structure consists of a control gate, a collector, and an emitter. By applying a current through the control gate, a potential difference is created which causes a voltage drop across the collector-emitter junction. This voltage drop is what allows the module to regulate power and voltage flows in a system.
The module is able to control the current and voltage flow in a system through the use of two transistors, a P-channel MOSFET and an N-channel MOSFET. Both transistors are connected directly to the control gate. The P-channel MOSFET reduces voltages, while the N-channel MOSFET increases them. This way, a variable amount of current can be regulated.
In addition to the two transistors, the APTGT30DA170D1G also uses a boost capacitor to provide additional power when needed. This capacitor stores energy and releases it when the module is under heavy load, allowing for a more efficient overall operation.
Conclusion
The APTGT30DA170D1G is a powerful and reliable power electronic module. It is structured to allow for efficient current control, with its two transistors and a boost capacitor working together to regulate voltage and power flows. Its maximum breakdown voltage and current capacity means that it is suitable for a variety of applications and able to provide sufficient power to support medium to high power applications. Its industry-standard package makes it easy to integrate into existing systems, allowing for a more efficient and cost-effective installation.
The specific data is subject to PDF, and the above content is for reference
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