APTGT75DA170D1G Allicdata Electronics
Allicdata Part #:

APTGT75DA170D1G-ND

Manufacturer Part#:

APTGT75DA170D1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1700V 120A 520W D1
More Detail: IGBT Module Trench Field Stop Single 1700V 120A 52...
DataSheet: APTGT75DA170D1G datasheetAPTGT75DA170D1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 120A
Power - Max: 520W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Description

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APTGT75DA170D1G is a modern type of semiconductor, specifically an Insulated Gate Bipolar Transistor (IGBT) module, which is used in a range of industrial and consumer electronics applications. It is one of the most common types of IGBT modules available both in terms of size and power rating. As such, it is an attractive option for both high-voltage and high-current applications due to its compact size and efficient design.

An IGBT module consists of an insulated gate, a bipolar transistor, and a module base. The insulated gate, also known as the P-type layer, consists of thin layers of semiconductor materials stacked on top of each other. The transistor layer is then surrounded with a ceramic insulating material referred to as the dielectric. Finally, the module base consists of an epoxy casing that encloses and supports the IGBT and other components. Together these components create a robust and efficient semiconductor device.

The APTGT75DA170D1G is designed for applications that require higher voltage and current than a typical consumer electronic device would require. It can support high-voltage and high-current applications up to 300A with a breakdown voltage of 1700V. This makes it an ideal choice for a variety of industrial and consumer applications, ranging from motor drives and pumps to consumer power supplies and inverters.

The working principle of an IGBT module like the APTGT75DA170D1G relies on the princip le of "Charge-Coupled Device" (CCD). Essentially, this means that the IGBT can rapidly switch from conducting state to non-conducting state, depending on the polarity of the gate current. When the gate current is positive, the IGBT conducts electricity and allows current to flow through. When the gate current is negative, however, the IGBT blocks current flow and stays non-conductive.

The APTGT75DA170D1G is also capable of higher switching speeds than other types of IGBT modules and is able to control currents up to 300A. This makes it an ideal choice for applications requiring greater power or speed such as motor drives, inverters, and power supplies. Additionally, its efficient design helps to reduce the heat generated when in operation, resulting in a safe, reliable, and cost-effective device overall.

The specific data is subject to PDF, and the above content is for reference

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