BA782S-E3-18 Allicdata Electronics
Allicdata Part #:

BA782S-E3-18-ND

Manufacturer Part#:

BA782S-E3-18

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE BAND SW 100MA SOD323
More Detail: RF Diode PIN - Single 35V 100mA SOD-323
DataSheet: BA782S-E3-18 datasheetBA782S-E3-18 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.25pF @ 3V, 1MHz
Resistance @ If, F: 700 mOhm @ 3mA, 1GHz
Operating Temperature: 125°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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BA782S-E3-18 is a high-frequency rectifier. It has a wide range of applications, such as in audio and video switching systems, modulators, mixers, RF and IF amplifiers, and so on. It is an essential part of electronic circuits and its working principle is quite simple.

The BA782S-E3-18 consists of two diodes. The diodes are connected in series and per the direction of current they work oppositely. When the electric current flows from the anode to the cathode, the diode to the left, conducts current and the diode to the right is reversed biased and hence does not conduct current. When, however, the electric current flow is from the cathode to the anode, the diode to the left is reversed biased and stops conducting current, whereas the diode to the right conducts current. This is how it works as a rectifier, i.e., it lets current through in only one direction.

This rectifier has a higher PIV rating up to 600V. This ensures it can supple higher current rates and thus increases efficiency. Due to its greater efficiency and low power dissipation, the BA782S-E3-18 is suitable for use in portable and handheld electronics.

The BA782S-E3-18 also offers a higher max. reverse current leakage as compared to other diodes and enables it to be used in high-end RF amplifiers where it is subjected to severe reverse voltages. The higher leakage current helps to preserve low distortion and low noise characteristics.

The diodes used in BA782S-E3-18 are advanced Schottky Barrier Diodes that can also handle much higher maximum junction temperatures, thus making them ideal for use in high-temperature applications such as automotive and power electronics. Moreover, the combination of these diodes also helps to reduce the forward voltage drop and hence improves the device’s performance. The product specifications clearly indicate these maximum junction temperatures and various other data related to optimum working.

The combination of ultra-low-capacitance Schottky Barrier Diodes for the BA782S-E3-18 further reduces the number of undesirable effects during RF operations. It also reduces the noise that can be generated by high-frequency switching operations as RF switches and also offers much better RF isolation. The presence of ultra-low capacitance diodes also helps to increase amplification.

The BA782S-E3-18 is therefore a very reliable and efficient high-frequency rectifier and can be used in various applications with ease. It helps improve the performance of the device while offering high efficiency with low noise levels. Despite its small size and light weight, this rectifier can handle considerable power levels and offers good performance even in extreme temperature conditions.

The specific data is subject to PDF, and the above content is for reference

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