BA783S-HE3-18

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The BA783S-HE3-18 is a radio frequency (RF) diode in the form of a flat package. It has a maximum current rating of 2.5 Amps and a maximum voltage rating of 7 volts. It can operate at temperatures up to 175°C and is capable of high power handling. The wide frequency range of this RF diode allows it to be used in a variety of applications, such as microwave engineering, telecommunications, digital signals, and other high-frequency circuit designs.

In terms of its application field, the BA783S-HE3-18 can be used in a wide range of microwave engineering and telecommunications applications. For example, it can be used in low-noise amplifiers (LNAs), mixer circuits, local oscillators, and frequency multipliers. Additionally, the diode can be used in television, radio circuit design and power detection circuits. Furthermore, it can be employed in amplitude modulation (AM), frequency modulation (FM) and pulse modulation applications, due to its robustness in handling power.

This diode works by utilizing the rectifying effect of a PN junction to convert the RF signals into DC. The PN junction does this by rectifying the RF signal, so that the current flows in only one direction. The diode is then able to rectify the incoming AC voltage, which is achieved via a precisely controlled amount of reverse bias within the junction. The PN junction can achieve this in two ways: capacitively, which it uses to block the passage of AC signals when the bias is low, and resistively, which it uses to limit the reverse leakage current.

Furthermore, the BA783S-HE3-18 also has a wide frequency range of DC to 1.2GHZ. This, combined with its low power consumption and high power handling capability, makes it an ideal choice for a variety of high-frequency applications, in addition to its highly efficient rectifying capabilities. This diode is also chemical, shock, temperature and radiation-resistant, making it a highly reliable and durable component.

In summary, the BA783S-HE3-18 is a radio frequency diode package that is capable of handling high power and wide frequency ranges, making it ideal for use in a number of applications, such as microwave engineering, telecommunications, digital signals and other high-frequency circuit designs. It is characterized by its reliability and robustness, as well as its ability to efficiently rectify incoming AC voltages, due to its precisely controlled amount of reverse bias within the PN junction.

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