| Allicdata Part #: | BA783S-HE3-08-ND |
| Manufacturer Part#: |
BA783S-HE3-08 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE BAND SW 100MA SOD323 |
| More Detail: | RF Diode PIN - Single 35V 100mA SOD-323 |
| DataSheet: |  BA783S-HE3-08 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | PIN - Single |
| Voltage - Peak Reverse (Max): | 35V |
| Current - Max: | 100mA |
| Capacitance @ Vr, F: | 1.2pF @ 3V, 1MHz |
| Resistance @ If, F: | 1.2 Ohm @ 3mA, 1GHz |
| Operating Temperature: | 125°C (TJ) |
| Package / Case: | SC-76, SOD-323 |
| Supplier Device Package: | SOD-323 |
Description
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BA783S-HE3-08 application field and working principle
BA783S-HE3-08 is a type of diode with a wide range of applications in modern electronics. It is a high-performance RF device designed to perform a variety of functions from controlling signal amplitudes to managing DC power levels. The device is constructed from two silicon chips with opposite serrated contact points to create a bipolar junction transistor (BJT). The device utilizes the principle of minority carrier injection to regulate the flow of current.In general, RF devices such as BA783S-HE3-08 employs a basic operating principle which is the interaction between current and voltage. The BJT of the device has a high input impedance, thereby allowing it to respond quickly to voltage changes in the circuit. This response is then used to determine the current which should be sent to the device\'s load.The application field of a BA783S-HE3-08 mainly lies in its ability to control the level of voltage and current in a circuit. It can be used to generate and amplify signals in a radio frequency (RF) circuit, or to reduce the power level of a circuit in order to prevent damage to electronic components. Other common applications include pulse width modulation (PWM) and signal conditioning circuits.The BA783S-HE3-08 is particularly appreciated for its capability to detect even the smallest of voltage changes. It is also one of the few diode devices which are able to function accurately in both low current and high impedance situations. Due to these characteristics, the device is essential for controlling signal amplitudes, DC power levels, reducing power consumption and signal conditioning over a wide range of frequencies.A BA783S-HE3-08 is essentially a BJT with two silicon chips, each with an opposing surface. This configuration makes up the control block of the device while its output or load are connected to terminals of the device. The voltage or current supplied to the input terminal of the BJT triggers the device and sets up a minority carrier injection, which in turn controls the current flowing through the BJT.The BA783S-HE3-08 is capable of providing an extremely fast response time to voltage changes and can switch rapidly between conducting and blocking conditions. This enables it to quickly filter out noise signals and maintain signal integrity. Its dynamic control range makes it particularly useful in suppressing transients caused by power surges.Overall, the BA783S-HE3-08 device is an important component of modern electronics, offering varied solutions for signal amplifications, signal conditioning, voltage control, transient suppressions and power management. Its innovative design utilizes silicon chips and minority carrier injection to ensure that it can operate in different conditions of current and voltage, providing high performance RF devices for today\'s digital world.The specific data is subject to PDF, and the above content is for reference
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