BA783-HE3-18

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	35V
Current - Max:	100mA
Capacitance @ Vr, F:	1.2pF @ 3V, 1MHz
Resistance @ If, F:	1.2 Ohm @ 3mA, 1GHz
Operating Temperature:	125°C (TJ)
Package / Case:	SOD-123
Supplier Device Package:	SOD-123

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BA783-HE3-18 is a type of diode that is specially used in radio frequency (RF) applications. It is used in a wide range of RF systems, such as those found in communication, navigation, and radar systems. This type of diode can also be used in RF circuits where high efficiency is required.A diode is a two-terminal electrical component that is designed to allow current to flow in one direction only. It is made up of an N-type semiconductor material and a P-type material. It acts as an electronic switch, allowing current to flow through it in one direction, while blocking it in the other. There are several different types of diode, each with a distinct use and purpose. As the name implies, a radio frequency (RF) diode is designed for use in applications involving radio-frequency (RF) signals.The BA783-HE3-18 is a surface mount Schottky barrier diode. Schottky barrier diodes are known for their low voltage drop, low capacitance, and fast switching speed. This allows them to be used in a variety of RF applications where high frequency signals must be processed quickly and with minimal distortion. Furthermore, the Schottky barrier diode\'s low turn-on voltage makes it well suited for use in circuits with high voltages.The PN junction that makes up the Schottky barrier diode has a reverse-biased Schottky-contact that lies between the PN junction and the Anode terminal of the diode. This arrangement allows the diode to conduct more current while consuming less power than traditional PN junction-based diodes. Furthermore, due to the Schottky-contact\'s low depletion region, it allows the diode to turn on and off much faster than other types of diode.The BA783-HE3-18 diode is suitable for a variety of RF applications. It can be used as a detector, mixer rectifier, as a switch, or as a linear amplifier. In a detector application, it can be used to detect a radio-frequency signal. In a mixer application, it can be used to mix two high-frequency signals together to create a modulated output. In a rectifier application, it can be used to convert the RF signals into a usable DC voltage. In a switch application, it can be used to switch an RF signal on and off quickly. Finally, in a linear amplifier application, it can be used to amplify a weak RF signal. The BA783-HE3-18 is also suitable for a variety of other applications where high-frequency signals must be processed quickly and accurately. For example, it can be used in communications, navigation, and radar systems, as well as in medical imaging systems. Furthermore, due to its low voltage drop and low capacitance, it is well suited for use in high-speed data transfer applications.In conclusion, the BA783-HE3-18 is a type of Schottky barrier diode that is specially designed for radio frequency (RF) applications. It is capable of conducting more current while consuming less power than traditional PN junction-based diodes. Furthermore, its low voltage drop and low capacitance make it well suited for high frequency, high speed applications. The BA783-HE3-18 can be used in a variety of RF systems, such as those found in communication, navigation, and radar systems, as well as in medical imaging systems.

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