BA782S-HE3-18

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	35V
Current - Max:	100mA
Capacitance @ Vr, F:	1.25pF @ 3V, 1MHz
Resistance @ If, F:	700 mOhm @ 3mA, 1GHz
Operating Temperature:	125°C (TJ)
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323

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BA782S-HE3-18 Application Field and Working Principle

BA782S-HE3-18 is a medium power GaAs dual-gate MESFET type diode in the RF family product line. It is a high-power, high-frequency, high-speed transistor device, designed to operate on transmitters up to 1000 W in the 1 GHz - 2 GHz frequency range.The MESFET type diode is the best performing RF component available, since it provides a low resistance path for radio signals and can handle high frequency and power without distortion. The BA782S-HE3-18 has two gates, each controlled separately to access a variety of input signals and to adjust the diode\'s characteristics and performance.The BA782S-HE3-18 is used in a variety of applications including commercial, industrial, and military. Common applications include amplifiers, filters, receivers, and transceivers. It is also used in cordless phones, FM station transmission amplifiers, and microwave transmitters and receivers.In the communications field, the MESFET type diodes are used to increase the signal strength while minimizing noise. Noise is an undesired energy that can cover the signal and reduce its quality. The BA782S-HE3-18 effectively eliminates these types of noise and improves the signal quality for communications.The working principle of the BA782S-HE3-18 is relatively simple. When a signal is applied to its two gates, current flows from the first gate\'s P-region to the first gate\'s N-region, and from the second gate\'s P-region to the second gate\'s N-region. This current then flows through the depletion region, where it is amplified and filtered before being sent back to the output.This type of diode is often used in amplifier stages to provide power gain. The power output is typically much greater than the power supplied by it, because of the amplification of the signal in its depletion region. This allows for higher power output at different frequencies, while still maintaining its low noise.The BA782S-HE3-18 is relatively easy to use and its design makes it highly reliable. The high power capability and wide frequency range makes it suitable for many applications which require strong signals with low noise. Its ability to adjust its power gain through the two gates makes it extremely flexible and provides the designer with a great deal of control over its performance.

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