BAS116,235 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	215mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 150mA
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	3µs
Current - Reverse Leakage @ Vr:	5nA @ 75V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Operating Temperature - Junction:	150°C (Max)
Base Part Number:	BAS116

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BAS116,235 Application Field and Working Principle

The BAS116,235 are diodes that are used as a rectifying switch in a wide range of applications. They are used in circuits where they need to block current in one direction while allowing current to pass in the other direction. This active switch is important in the fields of electronic engineering and industrial process control. This article will discuss the application field and working principle of the BAS116,235.

Application Field

The BAS116,235 are primarily used in electronic circuits and process control. They can be used in rectifier and switch designs, such as in DC-DC converters, audio amplifiers, optical signal processing, logic gates, or digital logic applications. BAS116,235 can be used as a freewheeling diode for motor applications and are also useful for reactive power compensation and harmonic interference reduction.

These diodes are also suitable for transients, high currents, and high voltages. The BAS116,235 rectifier’s voltage capability can be up to 6 kV and its power capability can reach 600 watts. They are also used in high-efficiency applications, such as AC-DC converters.

Working Principle

The BAS116,235 diodes are designed to allow current to flow in one direction, while blocking current in the opposite direction. This blocking of current is called rectification, and it is how they can control the flow of current in certain circuits.

The BAS116,235 consists of two p-type layers and one n-type layer. The p-n-p layer structure is designed to meet the rectification needs, as it creates a barrier to the current that should be blocked. The p-type layer is the anode, and the n-type layer is the cathode.

When a current is applied to the anode and the cathode, it increases the voltage across the device and causes current to flow in one direction. This is known as forward biasing. On the other hand, if the applied voltage is reversed, the current will be blocked, as the voltage is too low to penetrate the barrier. This is known as reverse biasing.

In conclusion, the BAS116,235 diodes are used in many applications, including rectifier and switch designs, voltage and power control, transient control, and reactive power compensation. The working principle is based on the p-n-p layer structure which allows the BAS116,235 to block current in one direction and allow current to flow in the other direction.

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