Allicdata Part #: | BAS16TT1GOSTR-ND |
Manufacturer Part#: |
BAS16TT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA SC75 |
More Detail: | Diode Standard 100V 200mA (DC) Surface Mount SC-75... |
DataSheet: | BAS16TT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 6ns |
Current - Reverse Leakage @ Vr: | 1µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAS16 |
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Diodes are electronic components used to control the flow of electric current. They are found in many types of circuits and are used to perform a variety of functions, including rectification, voltage regulation, and signal processing. The BAS16TT1G is a single-die shielded, ultra-high performance Schottky barrier rectifier. It is designed to address the needs of high power circuit designs that demand lower junction capacitance and improved reverse efficiency.
Application Field
The BAS16TT1G diode is designed for a variety of applications, including use as a low-loss semiconductor switch for DC-DC converters, AC-DC rectifiers, power supplies and battery chargers. It is also suitable for reverse-battery protection, EMI/RFI filtering, lighting, electromechanical relays, and solenoids. The superior surge capability and low forward-voltage drop also makes it suitable for automotive applications, such as ECUs and power steering control.
Working Principle
A diode allows current to flow in one direction, while blocking it from flowing in the opposite direction. This is known as rectification and is a fundamental property of the diode. The BAS16TT1G features an ultra-low forward-voltage drop and low junction capacitance that make it ideal for high-frequency applications. The low junction capacitance is due to the Schottky barrier which forms between the n-type and p-type material, resulting in a lower voltage loss and faster switching time. Additionally, this diode has a higher reverse voltage rating, making it suitable for withstanding high reverse-voltage currents for extended periods.
The BAS16TT1G is capable of providing superior surge performance and high-speed switching. Its ability to withstand a larger reverse surge current makes it ideal for battery protection applications, while its low reverse leakage current ensures long-term reliability in power supply and lighting applications. Additionally, its wide operating temperature range ensures reliable performance even in the most extreme temperatures.
The BAS16TT1G single diode is a reliable, high-performance, low-loss rectifier that is suitable for a variety of applications. Its superior surge capability, low forward-voltage drop, and high reverse-voltage rating make it an excellent choice for automotive, battery protection, lighting, and other power supply designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BAS16VY/APGX | Nexperia USA... | 0.05 $ | 1000 | BAS16VY/APG/SOT363/SC-88D... |
BAS16GWX | Nexperia USA... | -- | 1000 | DIODE GEN PURP 100V 215MA... |
BAS16LT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16WT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16HT3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,235 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
BAS19,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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BAS116LT3G | ON Semicondu... | 0.02 $ | 10000 | DIODE GEN PURP 75V 200MA ... |
BAS16-HE3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 75V 150MA ... |
BAS16WS-HE3-08 | Vishay Semic... | 0.03 $ | 9000 | DIODE GEN PURP 75V 250MA ... |
BAS16GWJ | Nexperia USA... | -- | 60000 | DIODE GEN PURP 100V 215MA... |
BAS19LT1G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS16-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 200MA ... |
BAS16HT1G | ON Semicondu... | -- | 40 | DIODE GEN PURP 100V 200MA... |
BAS16XV2T5G | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
BAS16X-TP | Micro Commer... | 0.02 $ | 56000 | DIODE GEN PURP 75V 200MA ... |
BAS16W,115 | Nexperia USA... | 0.02 $ | 48000 | DIODE GEN PURP 100V 175MA... |
BAS16P2T5G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 200MA... |
BAS16W-TP | Micro Commer... | -- | 204000 | DIODE GEN PURP 75V 100MA ... |
BAS1603WE6327HTSA1 | Infineon Tec... | 0.03 $ | 9000 | DIODE GEN PURP 80V 250MA ... |
BAS1602VH6327XTSA1 | Infineon Tec... | 0.03 $ | 18000 | DIODE GEN PURP 80V 200MA ... |
BAS16WS-E3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAS19 | ON Semicondu... | -- | 18000 | DIODE GEN PURP 120V 200MA... |
BAS116LT1G | ON Semicondu... | -- | 3000 | DIODE GEN PURP 75V 200MA ... |
BAS116LP3-7 | Diodes Incor... | -- | 70000 | DIODE GEN PURP 85V 215MA ... |
BAS19W-7-F | Diodes Incor... | -- | 3000 | DIODE GEN PURP 100V 200MA... |
BAS16H,115 | Nexperia USA... | 0.04 $ | 18000 | DIODE GEN PURP 100V 215MA... |
BAS16L,315 | Nexperia USA... | 0.04 $ | 120000 | DIODE GEN PURP 100V 215MA... |
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