Allicdata Part #: | BAS170WS-G3-18-ND |
Manufacturer Part#: |
BAS170WS-G3-18 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 70V 70MA SOD323 |
More Detail: | Diode Schottky 70V 70mA Surface Mount SOD-323 |
DataSheet: | BAS170WS-G3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03927 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 70V |
Current - Average Rectified (Io): | 70mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 15mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 10µA @ 70V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -55°C ~ 125°C |
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Diodes are semiconductor devices that allow electric current to flow in one direction while blocking it in the other. Rectifiers are diodes that convert alternating current to direct current. Single rectifiers supply an individual rectifying element. The BAS170WS-G3-18 is a surface mount ultra-fast rectifier with molded plastic over the leads to protect against shock and vibration. This single rectifier is designed for use in high frequency switching power supplies, inverters, and polarity protection applications.
The BAS170WS-G3-18 is an ultra-fast single rectifier, rated for operation at high frequencies up to 5 MHz. It features high current handling capacity and low body leakage currents of 10 μA at 75°C. The breakdown voltage is 175V and maximum power dissipation is 360mW at a 75°C rated case temperature. It is also equipped with internal solderable surface, which provides improved mounting strength to reduce thermal cycling stress.
The working principle of the BAS170WS-G3-18 single rectifier is based on the principle of reverse biasing of silicon semiconductor material. In forward bias, electrons flow from the n-type semiconductor layer to the p-type semiconductor layer. This allows current to flow in the forward direction. When reverse biasing, the junction is not activated, and current cannot flow from the n-type material to the p-type material. This prevents current from flowing in the reverse direction by blocking it.
The BAS170WS-G3-18 single rectifier is designed for use in automotive, off-line and distributed power systems, industrial, HV AC/DC power supplies, telecommunication systems, and home appliances. It can be used in automotive electronics such as on-board chargers, locomotive switching power supplies, transformer and relay protection. The BAS170WS-G3-18 is also suitable for switching high frequency power supplies in consumer and industrial applications.
The BAS170WS-G3-18 single rectifier features an easy one-step process for mounting. The terminals are lead free, soldered to a hot air level. It also features a low-inductance design, which reduces losses due to ringing during high frequency switching. The device is also equipped with an integrated strain relief that provides superior reliability in high-humidity applications.
In conclusion, the BAS170WS-G3-18 single rectifier is a surface mount ultra-fast rectifier. It is designed for use in high frequency switching power supplies, inverters, and polarity protection applications. It is well suited for automotive electronics, off-line and distributed power systems, HV AC/DC power supplies, and telecommunication systems. The BAS170WS-G3-18 features a low-inductance design, integrated strain relief, and easy one-step process for mounting. It utilizes the principle of reverse biasing of silicon semiconductor material to prevent current from flowing in the reverse direction.
The specific data is subject to PDF, and the above content is for reference
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