Allicdata Part #: | BAS116LT1OSCT-ND |
Manufacturer Part#: |
BAS116LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 75V 200MA SOT23-3 |
More Detail: | Diode Standard 75V 200mA (DC) Surface Mount SOT-23... |
DataSheet: | BAS116LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5nA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAS116 |
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BAS116LT1 is a type of single rectifier diode which is widely used in high power applications. It is a three-layer silicon diode that offers a better forward voltage drop at higher currents and a remarkably low reverse recovery time. The device has a low forward voltage drop, high current carrying ability, and a low leakage rate.
BAS116LT1 devices are commonly used in switching power supplies, coupled with switching transistors to turn the device on and off. This type of diodes are also popular in automative applications, thanks to their low forward voltage drop and high current-carrying capacity. They are also suitable for laser diode protection, LED lighting, and other power electronics applications.
The actual operation of a BAS116LT1 diode depends on its PN junction. When the device is reverse biased the N type material creates a strong electric field which is strong enough to repel any electrons from the P material and prevent current flow. In forward bias, electrons from the negative voltage side will move towards the positive voltage side and complete the current flow.
BAS116LT1 also has a low reverse recovery time. When the reverse voltage is removed, the stored charge carriers will be immediately swept away, resulting in a fast recovery of the junction so that it can switch again. This helps reduce switching losses, resulting in higher efficiency and better performance in switching power supplies.
To ensure the best results BAS116LT1 diodes should be installed and soldered correctly. The device should be connected to a series resistor and the power supply should be of the proper specification. The device should also be kept clean and should not be exposed to high temperatures and humidity.
In conclusion, BAS116LT1 is an ideal choice for applications with high power requirements. It is a three-layer silicon diode with a low forward voltage drop, high current-carrying capacity and low reverse recovery time. The device is suitable for use in switching power supplies, automative applications, and laser diode protection among others. Due to its unique features and compatibility with a variety of applications BAS116LT1 has become a popular choice for power electronics.
The specific data is subject to PDF, and the above content is for reference
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